IKW20N60T Infineon Technologies, IKW20N60T Datasheet - Page 6

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IKW20N60T

Manufacturer Part Number
IKW20N60T
Description
IGBT 600V 40A 166W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IKW20N60T

Package / Case
TO-247-3 (Straight Leads)
Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.05V @ 15V, 20A
Current - Collector (ic) (max)
40A
Power - Max
166W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
600 V
Maximum Gate Emitter Voltage
+/- 20 V
Maximum Operating Temperature
+ 175 C
Continuous Collector Current Ic Max
40 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
TO-247
Vce (max)
600.0 V
Ic(max) @ 25°
40.0 A
Ic(max) @ 100°
20.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IKW20N60TXK

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Power Semiconductors
100ns
100ns
Figure 9. Typical switching times as a
Figure 11. Typical switching times as a
10ns
10ns
1ns
25°C
0A
t
d(on)
5A
T
t
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
50°C
r
J
I
CE
GE
,
C
,
JUNCTION TEMPERATURE
= 400V, V
= 0/15V, I
10A
COLLECTOR CURRENT
75°C
15A
C
GE
100°C 125°C 150°C
20A 25A
= 20A, R
= 0/15V, R
J
CE
=175°C,
= 400V,
t
d(on)
t
r
G
=12Ω,
30A 35A
G
= 12Ω,
t
d(off)
t
f
t
d(off)
t
6
TrenchStop
f
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
100ns
10ns
7V
6V
5V
4V
3V
2V
1V
0V
-50°C
®
t
m in.
d(on)
Series
t
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
(I
d(off)
T
t
C
r
CE
J
,
t
0°C
= 0.29mA)
f
= 400V, V
JUNCTION TEMPERATURE
R
G
typ.
,
GATE RESISTOR
50°C
IKW20N60T
GE
IKP20N60T
m ax.
= 0/15V, I
J
= 175°C,
100°C
Rev. 2.5 Sep. 08
C
= 20A,
150°C

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