IGW15T120 Infineon Technologies, IGW15T120 Datasheet - Page 3

IGBT 1200V 30A 110W YO247-3

IGW15T120

Manufacturer Part Number
IGW15T120
Description
IGBT 1200V 30A 110W YO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IGW15T120

Package / Case
TO-247-3 (Straight Leads)
Igbt Type
NPT, Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.2V @ 15V, 15A
Current - Collector (ic) (max)
30A
Power - Max
110W
Input Type
Standard
Mounting Type
Through Hole
Configuration
Single
Collector- Emitter Voltage Vceo Max
1200 V
Collector-emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
+/- 20 V
Continuous Collector Current At 25 C
30 A
Gate-emitter Leakage Current
100 nA
Power Dissipation
110 W
Maximum Operating Temperature
+ 150 C
Continuous Collector Current Ic Max
30 A
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Transistor Type
IGBT
Dc Collector Current
15A
Collector Emitter Voltage Vces
2.2V
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
TRENCHSTOP™ 2-20kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
30.0 A
Ic(max) @ 100°
15.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IGW15T120XK

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IGW15T120
Manufacturer:
INFINEON
Quantity:
12 500
Part Number:
IGW15T120
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Switching Characteristic, Inductive Load, at T
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
2)
Power Semiconductors
Leakage inductance L
σ
and Stray capacity C
t
t
t
t
E
E
E
t
t
t
t
E
E
E
Symbol
Symbol
d ( o n )
r
d ( o f f )
f
d ( o n )
r
d ( o f f )
f
o n
o f f
t s
o n
o f f
t s
TrenchStop
σ
j
j
=25 °C
=150 °C
3
due to dynamic test circuit in Figure E.
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
T
V
V
R
L
C
Energy losses include
“tail” and diode
reverse recovery.
σ
σ
j
j
C C
G E
C C
G E
G
σ
G
σ
= 25° C,
= 15 0° C,
2 )
2 )
2 )
2 )
= 5 6Ω ,
= 56Ω
= 6 00V, I
= 0/ 1 5V ,
= 180nH,
= 6 00V, I
= 0/ 1 5V ,
= 180nH,
=39pF
=39pF
Conditions
Conditions
®
Series
C
C
= 15A,
= 15A,
min.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IGW15T120
Value
Value
typ.
typ.
520
600
120
1.3
1.4
2.7
2.0
2.1
4.1
50
30
60
50
35
Rev. 2.5
max.
max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Nov. 09
Unit
ns
mJ
Unit
ns
mJ

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