IHW15T120 Infineon Technologies, IHW15T120 Datasheet
IHW15T120
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IHW15T120 Summary of contents
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... Soft Switching Series ® and Fieldstop technology CE(sat) ™ HE diode 1 for target applications T Marking CE(sat),Tj=25°C j,max 1.7V H15T120 150 C Symbol jmax =25°C I jmax limited jmax IHW15T120 PG-TO-247-3 Package PG-TO247-3 Value 1200 130 120 113 -40...+150 j -55...+150 Rev. 2.3 Sep 08 Unit ...
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... Soldering temperature, 1.6mm (0.063 in.) from case for 10s Power Semiconductors Soft Switching Series - 2 IHW15T120 260 Rev. 2.3 Sep 08 ...
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... Conditions Symbol Conditions =0.5mA ( =15A 125 150 150 =0.6mA 150 =20V =20V, I =15A IHW15T120 Max. Value Unit 1.1 K/W 1.3 40 Value Unit min. Typ. max. 1200 - - V - 1.7 2 1.7 2.2 - 1.7 - 5.0 5 100 none Ω Rev. 2.3 Sep 08 ...
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... Power Semiconductors Soft Switching Series C V =25V f=1MHz =15A =15V =15V 600 = Symbol Conditions =15A 5V 80nH =39pF Energy losses include E “tail” and diode reverse recovery 750A IHW15T120 - 1082 - Value Unit min. typ. max 520 - - 140 - ns - 950 nC - 13.3 A Rev. 2.3 Sep 08 ...
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... Leakage inductance Stray capacity C due to dynamic test circuit in Figure E. Power Semiconductors Soft Switching Series =150 C j Symbol Conditions 150 =15A 5V 80nH =39pF Energy losses include E “tail” and diode reverse recovery 150 750A IHW15T120 Value Unit min. typ. max 600 - - 120 - - 210 - ns - 1600 - Rev. 2.3 Sep 08 ...
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... V Figure 2. IGBT Safe operating area = 600V, CE 30A 20A 10A 100°C 125°C 0A 25°C Figure 4. Collector current as a function of 6 IHW15T120 t p 10µs 200µs 500µs 2ms DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 150 C ...
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... Power Semiconductors Soft Switching Series 40A V 30A 20A 10A Figure 6. Typical output characteristic 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V -50°C 8V 10V 12V Figure 8. Typical collector-emitter 7 IHW15T120 =17V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE 150°C) j 0°C 50°C 100° ...
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... Figure 10. Typical switching times as a =56Ω -50°C 100°C 150°C Figure 12. Gate-emitter threshold voltage as =600V, =56Ω IHW15T120 t d(off GATE RESISTOR G function of gate resistor (inductive load, T =150° =600V, V =0/15V, I =15A Dynamic test circuit in Figure E) 0°C 50°C 100° ...
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... G 6mJ 5mJ 4mJ E ts 3mJ 2mJ E off 1mJ E on 0mJ 150°C 400V V Figure 16. Typical switching energy losses =600V, =56Ω IHW15T120 *) E and E include losses on ts due to diode recovery R , GATE RESISTOR function of gate resistor (inductive load, T =150° =600V, V =0/15V, I =15A Dynamic test circuit in Figure E) ...
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... V CE Figure 18. Typical capacitance as a function 125A 100A 75A 50A 25A 0A 16V 12V V Figure 20. Typical short circuit collector =25° IHW15T120 10V 20V , - COLLECTOR EMITTER VOLTAGE of collector-emitter voltage (V =0V MHz) GE 14V 16V 18V , - GATE EMITTETR VOLTAGE GE current as a function of gate- ...
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... P 2µC 1µC T =150° =25°C J 0µC 800A/µs 200A/µs Figure 24. Typical reverse recovery charge as a function of diode current slope (V =600V Dynamic test circuit in Figure E) 11 IHW15T120 0 0.1 0.3069 4.097*10 0.5654 4.430*10 0.05 0.4218 3.764*10 0.00818 3.021* 0.02 0.01 ...
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... Dynamic test circuit in Figure E) 2,0V I =15A F 8A 1,5V 5A 2,5A 1,0V 0,5V 0,0V -50° Figure 28. Typical diode forward voltage as a function of junction temperature 12 IHW15T120 T =25° =150°C J 400A/µs 600A/µs 800A/µs /dt, DIODE CURRENT SLOPE =8A, F 0°C 50°C 100°C , ...
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... IHW15T120 Z8B00003327 7.5mm 17-12-2007 03 Rev. 2.3 Sep 08 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors Soft Switching Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 14 IHW15T120 =180nH =39pF. Rev. 2.3 Sep 08 ...
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... If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors Soft Switching Series 15 IHW15T120 Rev. 2.3 Sep 08 ...