SKW20N60 Infineon Technologies, SKW20N60 Datasheet - Page 8

• Manufacturer Part Number: SKW20N60
• Description: IGBT NPT 600V 40A 179W TO247-3
• Manufacturer: Infineon Technologies

Specifications of SKW20N60

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 20A
• Current - Collector (ic) (max): 40A
• Power - Max: 179W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 600V
• Power Dissipation Pd: 179W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• No. Of Pins: 3
• Transistor Type: IGBT
• Rohs Compliant: Yes
• Switching Frequency: Fast IGBT 10-40 kHz
• Package: TO-247
• Vce (max): 600.0 V
• Ic(max) @ 25°: 40.0 A
• Ic(max) @ 100°: 20.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

25 s
20 s
15 s
10 s
25V
20V
15V
10V
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V
5 s
0 s
5V
0V
10V
CE
0nC
Figure 17. Typical gate charge
(I
C
= 600V, start at T
= 20A)
V
25nC
11V
GE
,
Q
GATE
GE
50nC
,
12V
GATE CHARGE
-
EMITTER VOLTAGE
120V
j
= 25 C)
75nC 100nC 125nC
13V
14V
480V
15V
8
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(V
100pF
CE
10pF
350A
300A
250A
200A
150A
100A
1nF
50A
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V
0A
10V
GE
600V, T
0V
V
= 0V, f = 1MHz)
CE
V
,
GE
COLLECTOR
12V
,
j
= 150 C)
GATE
10V
-
EMITTER VOLTAGE
14V
-
EMITTER VOLTAGE
SKW20N60
20V
16V
30V
18V
C
C
C
iss
oss
rss
Jul-02
20V