SGW15N120 Infineon Technologies, SGW15N120 Datasheet
SGW15N120
Specifications of SGW15N120
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SGW15N120 Summary of contents
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... Operating junction and storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s 1 J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors http://www.infineon.com/igbt Marking off j 1.5mJ GP15N120 150°C 1.5mJ SGW15N120 PG-TO-247-3 150°C Symbol jmax 25°C j ...
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... C V =25V =0V f=1MHz =15A =15V PG- TO- 220- 3-1 E PG- TO- 247- 3 ≤5 μ =15V ≤1 200 V≤ ≤ 150 ° SGP15N120 SGW15N120 Max. Value Unit 0.63 K Value Unit min. typ. max. 1200 - - V 2.5 3.1 3.6 - 3.7 4 μ 200 - - 800 - - 100 1250 1500 ...
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... =15V/0V 3Ω 80nH, E σ =40pF σ Energy losses include “tail” and diode reverse recovery. due to dynamic test circuit in figure E. σ 3 SGP15N120 SGW15N120 Value Unit min. typ. max 580 750 - 1.1 1 0.8 1.1 - 1.9 2.6 Value Unit min. typ. max. ...
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... V CE Figure 2. Safe operating area ( 35A 30A 25A 20A 15A 10A 5A 0A 125°C 25°C Figure 4. Collector current as a function of case temperature ≤ 15V SGP15N120 SGW15N120 μ μ μ 200 1ms DC 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE ≤ 150°C) = 25° ...
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... V , COLLECTOR CE Figure 6. Typical output characteristics (T = 150° 11V -50° Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SGP15N120 SGW15N120 =17V 15V 13V 11V EMITTER VOLTAGE I =30A C I =15A C I =7.5A C 0°C 50°C 100°C 150°C , JUNCTION TEMPERATURE Rev ...
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... Ω 800V dynamic test circuit in Fig 100°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.3mA Ω, 6 SGP15N120 SGW15N120 t d(off) t d(on Ω Ω GATE RESISTOR G = 150° +15V/0V 15A max. typ. min. ...
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... K K/W E off -3 10 K/W 100°C 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width ( Ω, 7 SGP15N120 SGW15N120 *) E and E include losses on ts due to diode recovery. Ω Ω GATE RESISTOR G = 150° +15V/0V 15A D=0.5 0.2 0.1 0.05 τ ...
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... V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage ≤1200V, T (100V≤ SGP15N120 SGW15N120 C iss C oss C rss 10V 20V 30V - EMITTER VOLTAGE 14V 16V 18V 20V , - GATE EMITTER VOLTAGE ≤ ...
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... Power Semiconductors PG-TO220-3-1 9 SGP15N120 SGW15N120 Rev. 2.5 Febr. 08 ...
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... Power Semiconductors SGW15N120 PG-TO247-3 10 SGP15N120 Rev. 2.5 Febr. 08 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors SGP15N120 SGW15N120 i Figure C. Definition of diodes switching characteristics τ τ ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L and stray capacity τ =180nH, σ =40pF. σ Rev. 2.5 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SGP15N120 SGW15N120 12 Rev. 2.5 Febr. 08 ...