IGW25T120 Infineon Technologies, IGW25T120 Datasheet - Page 6

• Manufacturer Part Number: IGW25T120
• Description: IGBT 1200V 50A 190W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW25T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 190W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
100ns
100ns
Figure 9. Typical switching times as a
Figure 11. Typical switching times as a
10ns
10ns
1ns
0A
0°C
t
t
t
t
t
t
t
d(off)
f
d(off)
f
t
d(on)
r
d(on)
r
T
function of collector current
(inductive load, T
V
Dynamic test circuit in Figure E)
function of junction temperature
(inductive load, V
V
Dynamic test circuit in Figure E)
J
I
CE
GE
,
C
10A
,
JUNCTION TEMPERATURE
=600V, V
=0/15V, I
COLLECTOR CURRENT
50°C
20A
C
GE
=25A, R
=0/15V, R
J
CE
=150°C,
100°C
=600V,
30A
G
=22Ω,
G
=22Ω,
40A
TrenchStop
150°C
6
Figure 10. Typical switching times as a
Figure 12. Gate-emitter threshold voltage as
®
100 ns
7V
6V
5V
4V
3V
2V
1V
0V
10 ns
-50°C
Series
1 ns
5Ω
function of gate resistor
(inductive load, T
V
Dynamic test circuit in Figure E)
a function of junction temperature
(I
T
CE
C
J
,
0°C
= 1.0mA)
=600V, V
JUNCTION TEMPERATURE
15Ω
R
G
,
GATE RESISTOR
50°C
25Ω
GE
IGW25T120
=0/15V, I
J
=150°C,
Rev. 2.4
35Ω
100°C
C
=25A,
45Ω
150°C
max.
Nov. 09
typ.
min.
t
t
t
t
d(off)
f
d(on)
r