IHW30N120R2 Infineon Technologies, IHW30N120R2 Datasheet - Page 5

• Manufacturer Part Number: IHW30N120R2
• Description: IGBT 1200V 60A 390W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IHW30N120R2

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 1.8V @ 15V, 30A
• Current - Collector (ic) (max): 60A
• Power - Max: 390W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 30A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Max: 390W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: RC Soft Switching Series 8-60 kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 60.0 A
• Ic(max) @ 100°: 30.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 5. Typical output characteristic
Figure 7. Typical transfer characteristic
80A
70A
60A
50A
40A
30A
20A
10A
80A
70A
60A
50A
40A
30A
20A
10A
0A
0A
0.0V
0V
V
CE
V
(T
(V
,
0.5V
2V
GE
COLLECTOR
j
CE
= 25°C)
,
=20V)
V
GATE-EMITTER VOLTAGE
GE
T
J
=20V
1.0V
=175°C
11V
4V
15V
13V
9V
7V
25°C
-
EMITTER VOLTAGE
1.5V
6V
2.0V
8V
2.5V
Soft Switching Series
10V
5
Figure 6. Typical output characteristic
Figure 8. Typical collector-emitter saturation
80A
70A
60A
50A
40A
30A
20A
10A
2.5V
2.0V
1.5V
1.0V
0.5V
0.0V
0A
0V
V
CE
(T
voltage as a function of junction
temperature
(V
,
0°C
T
COLLECTOR
J
j
GE
,
= 175°C)
JUNCTION TEMPERATURE
=15V)
1V
IHW30N120R2
V
GE
=20V
50°C
11V
15V
13V
9V
7V
-
EMITTER VOLTAGE
2V
Rev. 1.5
100°C
3V
I
I
150°C
C
Dec. 09
C
I
=30A
C
=60A
=15A