IKW25T120 Infineon Technologies, IKW25T120 Datasheet - Page 13

• Manufacturer Part Number: IKW25T120
• Description: IGBT 1200V 50A 190W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW25T120

• Igbt Type: NPT, Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 190W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 190W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Power Dissipation Pd: 190W
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™ 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
60A
40A
20A
Figure 27. Typical diode forward current as
0A
0V
a function of forward voltage
V
F
,
FORWARD VOLTAGE
1V
T
J
=25°C
150°C
2V
TrenchStop Series
13
Figure 28. Typical diode forward voltage as a
2,0V
1,5V
1,0V
0,5V
0,0V
®
I
F
=50A
-50°C
25A
15A
8A
function of junction temperature
T
J
,
JUNCTION TEMPERATURE
0°C
IKW25T120
50°C
Rev. 2.1
100°C
May 06