IGW25N120H3 Infineon Technologies, IGW25N120H3 Datasheet - Page 2

• Manufacturer Part Number: IGW25N120H3
• Description: IGBT 1200V 50A 326W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IGW25N120H3

• Igbt Type: Trench and Field Stop
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 25A
• Current - Collector (ic) (max): 50A
• Power - Max: 326W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 25A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Max: 326W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: HighSpeed3 20-100kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 50.0 A
• Ic(max) @ 100°: 25.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Key Performance and Package Parameters
High speed IGBT in Trench and Fieldstop technology
recommended in combination with SiC Diode IDH15S120
Features:
TRENCHSTOP
• best in class switching performance: less than 500µJ total
switching losses achievable
• very low V
• low EMI
• maximum junction temperature 175°C
• qualified according to JEDEC for target applications
• Pb-free lead plating; RoHS compliant
• complete product spectrum and PSpice Models:
http://www.infineon.com/igbt/
Applications:
• solar inverters
• uninterruptible power supplies
• welding converters
• converters with high switching frequency
Type
Type
Type
Type
IGW25N120H3
CEsat
TM
technology offering
1200V
V V V V
†Š
†Š †Š
†Š
25A
I I I I
† † † †
V V V V
High speed switching series third generation
†ŠÙÈÚ,
†ŠÙÈÚ,
†ŠÙÈÚ,
†ŠÙÈÚ,
2.05V
T T T T
ÝÎ=25°C
ÝÎ=25°C
ÝÎ=25°C
ÝÎ=25°C
2
175°C
T T T T
ÝÎÑÈà
ÝÎÑÈà
ÝÎÑÈà
ÝÎÑÈà
G25N120H3
Marking
Marking
Marking
Marking
IGW25N120H3
Rev. 1.1, 2011-01-25
G
PG-TO247-3
Package
Package
Package
Package
C
E