SKW15N120 Infineon Technologies, SKW15N120 Datasheet
SKW15N120
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SKW15N120 Summary of contents
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... J-STD-020 and JESD-022 2 Allowed number of short circuits: <1000; time between short circuits: >1s. Power Semiconductors for target applications http://www.infineon.com/igbt Marking C off j 1.5mJ K15N120 150 C Symbol jmax jmax 150 SKW15N120 G PG-TO-247-3-21 (TO-247AC) Package PG-TO-247-3-21 Value 1200 198 -55...+150 260 s Rev. 2G_1 C E Unit ...
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... Power Semiconductors Symbol Conditions Symbol Conditions =1200V,V = =0V,V =20V SKW15N120 Max. Value Unit 0.63 K/W 1.5 40 Value Unit min. typ. max. 1200 - - V 2.5 3.1 3.6 - 3.7 4.3 2.0 2 200 - - 800 - - 100 1250 1500 pF - 155 185 - 130 175 145 - A Rev. 2G_1 Apr 06 ...
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... =150 C j Symbol Conditions Energy losses include “tail” and diode reverse recovery SKW15N120 Value Unit min. typ. max 580 750 - 1.1 1 0.8 1.1 - 1 500 A/ s Value Unit min. typ. max 652 780 - 1.9 2 1.5 2.0 - 3.4 4.3 - 200 ...
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... V Figure 2. Safe operating area ( 35A 30A 25A 20A 15A 10A 5A 0A 25°C 100°C 125°C Figure 4. Collector current as a function of case temperature ( SKW15N120 1ms 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 150 50°C 75°C 100°C 125° CASE TEMPERATURE ...
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... Figure 6. Typical output characteristics (T = 150 11V -50°C T Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (V = 15V SKW15N120 =17V G E 15V 13V 11V COLLECTOR EMITTER VOLTAGE I =30A C I =15A C I =7.5A C 0°C 50°C 100°C 150°C , JUNCTION TEMPERATURE j Rev ...
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... Figure 10. Typical switching times as a function of gate resistor (inductive load 800V dynamic test circuit in Fig 100°C 150°C -50°C Figure 12. Gate-emitter threshold voltage as a function of junction temperature (I = 0.3mA SKW15N120 t d(off) t d(on GATE RESISTOR G = 150 +15V/0V 15A max. min. 0°C 50°C 100°C 150° ...
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... Fig K K/W E off -3 10 K/W 100°C 150°C 1µs Figure 16. IGBT transient thermal impedance as a function of pulse width ( SKW15N120 *) E and E include losses on ts due to diode recovery GATE RESISTOR G = 150 +15V/0V 15A D=0.5 0.2 0.1 0.05 0. 0.09751 0.67774 ...
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... GE 300A 250A 200A 150A 100A 50A 0A 14V 15V 10V V GE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (100V SKW15N120 C iss C oss C rss 10V 20V 30V - COLLECTOR EMITTER VOLTAGE 12V 14V 16V 18V 20V , - GATE ...
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... Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (V = 800V dynamic test circuit in Fig SKW15N120 I =15A F I =7.5A F 400A/ s 600A/ s 800A/ s 1000A DIODE CURRENT SLOPE F = 150 C, ...
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... T =25°C J 1.0V 0.5V 0. 0°C Figure 26. Typical diode forward voltage as a function of junction temperature , ( s ) 0.40049 0.09815 0.00612 0.00045 10ms 100ms 1s 10 SKW15N120 I =30A F I =15A F I =7.5A F 40°C 80°C 120° JUNCTION TEMPERATURE j Rev. 2G_1 Apr 06 ...
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... PG-TO247-3-21 Power Semiconductors SKW15N120 11 Rev. 2G_1 Apr 06 ...
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... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors SKW15N120 i Figure C. Definition of diodes switching characteristics ( Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance L =180nH, and stray capacity C =40pF Rev. 2G_1 Apr 06 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors SKW15N120 13 Rev. 2G_1 Apr 06 ...