IHW40T120 Infineon Technologies, IHW40T120 Datasheet

IGBT 1200V 75A 270W TO247-3

IHW40T120

Manufacturer Part Number
IHW40T120
Description
IGBT 1200V 75A 270W TO247-3
Manufacturer
Infineon Technologies
Series
TrenchStop™r
Datasheet

Specifications of IHW40T120

Igbt Type
Trench and Field Stop
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.3V @ 15V, 40A
Current - Collector (ic) (max)
75A
Power - Max
270W
Input Type
Standard
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads)
Transistor Type
IGBT
Dc Collector Current
40A
Collector Emitter Voltage Vces
2.3V
Power Dissipation Max
270W
Collector Emitter Voltage V(br)ceo
1.2kV
Operating Temperature Range
-40°C To +150°C
Transistor Case Style
TO-247
Rohs Compliant
Yes
Switching Frequency
RC Soft Switching Series 8-60 kHz
Package
TO-247
Vce (max)
1,200.0 V
Ic(max) @ 25°
75.0 A
Ic(max) @ 100°
40.0 A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IHW40T120
Manufacturer:
INFINEON
Quantity:
2 500
Part Number:
IHW40T120
Manufacturer:
INFINEON
Quantity:
6 000
Company:
Part Number:
IHW40T120
Quantity:
20
Low Loss DuoPack : IGBT in TrenchStop
Type
IHW40T120
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
T
Pulsed collector current, t
Turn off safe operating area
V
Diode forward current
T
T
Diode pulsed current, t
Diode surge non repetitive current, t
T
T
T
Gate-emitter voltage
Short circuit withstand time
V
Power dissipation, T
Operating junction temperature
Storage temperature
1
2)
Power Semiconductors
C
C
CE
C
C
C
C
C
GE
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
= 25 C
= 100 C
= 25 C
= 100 C
= 25 C, t
= 25 C, t
= 100 C, t
Short circuit withstand time – 10 s
Designed for :
TrenchStop
offers :
Very soft, fast recovery anti-parallel EmCon
Low EMI
Qualified according to JEDEC
Application specific optimisation of inverse diode
= 15V, V
Pb-free lead plating; RoHS compliant
1200V, T
- Soft Switching Applications
- Induction Heating
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in V
p
p
CC
p
= 10ms, sine halfwave
j
2.5µs, sine halfwave
2.5µs, sine halfwave
®
1200V
1200V, T
150 C
and Fieldstop technology for 1200 V applications
V
CE
C
= 25 C
p
limited by T
p
j
limited by T
2)
40A
with soft, fast recovery anti-parallel EmCon HE diode
150 C
I
C
1
for target applications
jmax
p
CE(sat)
V
limited by T
CE(sat),Tj=25°C
jmax
1.8V
Soft Switching Series
jmax
1
HE diode
150 C
T
j,max
®
and Fieldstop technology
H40T120
Marking
Symbol
V
I
I
-
I
I
I
V
t
P
T
T
C
C p u l s
F
F p u l s
F S M
S C
j
s t g
C E
G E
t o t
PG-TO247-3
Package
-40...+150
-55...+150
IHW40T120
Value
1200
19.8
105
105
200
160
270
75
40
31
47
78
10
20
PG-TO-247-3
Rev. 2.3 Sep 08
G
V
Unit
A
A
V
W
C
s
C
E

Related parts for IHW40T120

IHW40T120 Summary of contents

Page 1

... Fieldstop technology CE(sat) ™ HE diode 1 for target applications V T Marking CE(sat),Tj=25°C j,max 1.8V H40T120 150 C Symbol jmax jmax limited jmax IHW40T120 PG-TO-247-3 Package PG-TO247-3 Value Unit 1200 105 105 31 19 200 160 270 W -40...+150 C -55...+150 Rev. 2.3 Sep 08 ...

Page 2

... Soldering temperature, 1.6mm (0.063 in.) from case for 10s Power Semiconductors Soft Switching Series - 2 IHW40T120 260 Rev. 2.3 Sep 08 ...

Page 3

... 150 =20V =20V, I =40A =25V f=1MHz =40A =15V =15V 600 IHW40T120 Max. Value Unit 0.45 K/W 1.1 40 Value Unit min. Typ. max. 1200 - - V - 1.8 2 2.3 - 1.65 2.15 1.7 1.7 5.0 5 600 Ω - 2500 - pF - 130 - - 110 - - 203 - 210 - A Rev. 2.3 Sep 08 ...

Page 4

... F =150 C j Symbol Conditions 150 =40A 80nH =39pF Energy losses include E “tail” and diode reverse recovery 150 =18A 800A IHW40T120 Value Unit min. typ. max 480 - - 195 - ns - 1880 - Value Unit min. typ. max 580 - - 120 - - 5.0 - ...

Page 5

... V Figure 2. Safe operating area = 600V, CE 70A 60A 50A 40A 30A 20A 10A 0A 25°C 100°C 125°C Figure 4. Collector current as a function of 5 IHW40T120 10V 100V 1000V , - COLLECTOR EMITTER VOLTAGE 150 C;V =15V 75°C 125° ...

Page 6

... V Figure 6. Typical output characteristic 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V 0,5V 0,0V 8V 10V 12V -50°C Figure 8. Typical collector-emitter 6 IHW40T120 V =17V GE 15V 13V 11V COLLECTOR EMITTER VOLTAGE 150°C) j 0°C 50°C 100° JUNCTION TEMPERATURE ...

Page 7

... Soft Switching Series 1000 ns 100 60A Figure 10. Typical switching times as a =15Ω -50°C 100°C 150°C Figure 12. Gate-emitter threshold voltage as =600V, =15Ω IHW40T120 t d(off d(on GATE RESISTOR G function of gate resistor (inductive load, T =150° =600V, V =0/15V, I =40A Dynamic test circuit in Figure E) 0° ...

Page 8

... G 15mJ 10mJ E E off 5mJ 0mJ 150°C 400V Figure 16. Typical switching energy losses =600V, =15Ω IHW40T120 *) E and E include losses on ts due to diode recovery R , GATE RESISTOR function of gate resistor (inductive load, T =150° =600V, V =0/15V, I =40A Dynamic test circuit in Figure E) ...

Page 9

... V CE Figure 18. Typical capacitance as a function 300A 200A 100A 0A 16V 12V V Figure 20. Typical short circuit collector =25° IHW40T120 10V 20V , - COLLECTOR EMITTER VOLTAGE of collector-emitter voltage (V =0V MHz) GE 14V 16V 18V , - GATE EMITTETR VOLTAGE GE current as a function of gate- ...

Page 10

... K/W 10µs 10ms 100ms Figure 24. Diode transient thermal 3µC 2µC T =150°C 1µ =25°C J 0µC 800A/µs 200A/µs Figure 24. Typical reverse recovery charge 10 IHW40T120 D=0.5 0 0.2113 7.23*10 0.2922 8.13*10 0.1 0.3666 1.09*10 0.2248 1.55*10 0.05 R 0.02 1 0.01 single pulse ...

Page 11

... Dynamic test circuit in Figure E) 2,0V I =30A F 15A 1, 1,0V 0,5V 0,0V -50° Figure 28. Typical diode forward voltage as a function of junction temperature 11 IHW40T120 T =25° =150°C J 400A/µs 600A/µs 800A/µs /dt, DIODE CURRENT SLOPE =600V, I =15A 0°C 50°C 100°C , ...

Page 12

... IHW40T120 Z8B00003327 7.5mm 17-12-2007 03 Rev. 2.3 Sep 08 ...

Page 13

... Figure A. Definition of switching times Figure B. Definition of switching losses Power Semiconductors Soft Switching Series i Figure C. Definition of diodes switching characteristics (t) j p(t) r Figure D. Thermal equivalent circuit Figure E. Dynamic test circuit Leakage inductance Stray capacity C 13 IHW40T120 =180nH =39pF. Rev. 2.3 Sep 08 ...

Page 14

... If they fail reasonable to assume that the health of the user or other persons may be endangered. Power Semiconductors Soft Switching Series 14 IHW40T120 Rev. 2.3 Sep 08 ...

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