IKW40N120T2 Infineon Technologies, IKW40N120T2 Datasheet - Page 11

• Manufacturer Part Number: IKW40N120T2
• Description: IGBT 1200V 75A 480W TO247-3
• Manufacturer: Infineon Technologies
• Series: TrenchStop™r

Specifications of IKW40N120T2

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.2V @ 15V, 40A
• Current - Collector (ic) (max): 75A
• Power - Max: 480W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 2.2V
• Power Dissipation Max: 480W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -40°C To +175°C
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Switching Frequency: TRENCHSTOP™2 2-20kHz
• Package: TO-247
• Vce (max): 1,200.0 V
• Ic(max) @ 25°: 75.0 A
• Ic(max) @ 100°: 40.0 A
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Power Semiconductors
Figure 23. Typical reverse recovery time as a
Figure 25. Typical reverse recovery current as
40A
35A
30A
25A
20A
15A
10A
5A
0A
600ns
500ns
400ns
300ns
200ns
100ns
400A/µs
0ns
400A/µs
di
di
function of diode current slope
(V
Dynamic test circuit in Figure E)
a function of diode current slope
(V
Dynamic test circuit in Figure E)
F
F
R
R
/dt,
/dt,
=600V, I
=600V, I
800A/µs
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
800A/µs
F
F
=40A,
=40A,
1200A/µs
1200A/µs
1600A/µs
T
T
J
T
J
T
=25°C
1600A/µs
=175°C
J
J
=25°C
=175°C
TrenchStop
11
Figure 24. Typical reverse recovery charge as
Figure 26. Typical diode peak rate of fall of
-1000A/µs
8µC
6µC
4µC
2µC
0µC
®
-800A/µs
-600A/µs
-400A/µs
-200A/µs
2
-0A/µs
400A/µs
nd
Generation Series
400A/µs
a function of diode current slope
(V
Dynamic test circuit in Figure E)
reverse recovery current as a
function of diode current slope
(V
Dynamic test circuit in Figure E)
di
di
F
F
R
R
/dt,
/dt,
=600V, I
=600V, I
800A/µs
DIODE CURRENT SLOPE
DIODE CURRENT SLOPE
800A/µs
IKW40N120T2
F
F
=40A,
=40A,
1200A/µs
1200A/µs
Rev. 2.2
T
1600A/µs
T
J
1600A/µs
J
=25°C
=175°C
T
T
J
J
=175°C
=25°C
Sep 08