FGA15N120ANDTU Fairchild Semiconductor, FGA15N120ANDTU Datasheet - Page 3

• Manufacturer Part Number: FGA15N120ANDTU
• Description: IGBT NPT TRENCH 1200V 15A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA15N120ANDTU

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 15A
• Current - Collector (ic) (max): 24A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Fig 1. Typical Output Characteristics
Fig 3. Saturation Voltage vs. Case
Fig 5. Saturation Voltage vs. V
120
100
4.0
3.5
3.0
2.5
2.0
20
16
12
80
60
40
20
8
4
0
0
25
0
0
T
Common Emitter
T
Common Emitter
V
C
C
Temperature at Variant Current Level
GE
= 25℃
= 25℃
= 15V
Collector-Emitter Voltage, V
4
2
Gate-Emitter Voltage, V
50
Case Temperature, T
I
C
= 7.5A
8
4
15A
24A
75
20V
12
6
17V
C
GE
[ ℃ ]
15V
GE
I
CE
100
[V]
C
= 15A
[V]
16
24A
8
V
GE
= 10V
12V
125
20
10
Fig 2. Typical Saturation Voltage Characteristics
Fig 4. Load Current vs. Frequency
Fig 6. Saturation Voltage vs. V
80
60
40
20
20
16
12
30
20
10
0
8
4
0
0
0.1
0
0
Common Emitter
V
T
T
Common Emitter
T
Duty cycle : 50%
Tc = 100 ℃
Powe Dissipation = 40W
GE
C
C
C
= 25℃
= 125℃
= 125℃
= 15V
Collector-Emitter Voltage, V
4
Gate-Emitter Voltage, V
1
I
C
2
= 7.5A
Frequency [kHz]
8
15A
Vcc = 600V
load Current : peak of square wave
24A
10
12
4
GE
GE
CE
100
[V]
[V]
16
FGA15N120AND Rev. A
1000
20
6