FGA15N120ANDTU Fairchild Semiconductor, FGA15N120ANDTU Datasheet - Page 5

• Manufacturer Part Number: FGA15N120ANDTU
• Description: IGBT NPT TRENCH 1200V 15A TO-3P
• Manufacturer: Fairchild Semiconductor

Specifications of FGA15N120ANDTU

• Igbt Type: NPT
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.2V @ 15V, 15A
• Current - Collector (ic) (max): 24A
• Power - Max: 200W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Fig 13. Switching Loss vs. Collector Current
Fig 15. SOA Characteristics
0.01
100
0.1
0.1
10
10
1
1
0.1
5
Common Emitter
V
T
T
Ic MAX (Continuous)
Single Nonrepetitive
Pulse Tc = 25
Curves must be derated
linearly with increase
in temperature
Ic MAX (Pulsed)
C
C
GE
= 25℃
= 125℃
= ± 15V, R
10
Collector - Emitter Voltage, V
1
1E-3
0.01
o
0.1
Collector Current, I
C
10
G
1
= 20
1E-5
15
0.1
0.05
0.02
0.2
0.01
0.5
10
DC Operation
single pulse
20
Fig 17. Transient Thermal Impedance of IGBT
1E-4
C
[A]
100
1ms
CE
25
[V]
100 s
Eon
Eoff
1000
50 s
1E-3
Rectangular Pulse Duration [sec]
30
0.01
Fig 14. Gate Charge Characteristics
Fig 16. Turn-Off SOA
100
16
14
12
10
10
8
6
4
2
0
1
0
1
Common Emitter
R
T
C
L
= 40Ω
= 25℃
0.1
20
Vcc = 200V
Collector-Emitter Voltage, V
10
Gate Charge, Q
Pdm
40
Duty factor D = t1 / t2
Peak Tj = Pdm Zthjc + T
Safe Operating Area
V
GE
= 15V, T
1
t1
60
t2
C
= 125℃
100
g
[nC]
80
C
10
CE
[V]
400V
100
600V
1000
FGA15N120AND Rev. A
120