FGPF30N45TTU Fairchild Semiconductor, FGPF30N45TTU Datasheet - Page 3

• Manufacturer Part Number: FGPF30N45TTU
• Description: IGBT PDP 450V 30A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of FGPF30N45TTU

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 20A
• Power - Max: 50.4W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector (ic) (max): -

FGPF30N45T Rev. A
Typical Performance Characteristics
Figure 1. Typical Output Characteristics
Figure 3. Typical Saturation Voltage
Figure 5. Saturation Voltage vs. Case
120
1.8
1.6
1.4
1.2
1.0
120
80
40
80
40
0
0
25
0
0
Common Emitter
V
T
Common Emitter
V
T
T
Collector-EmitterCase Temperature, T
GE
C
C
C
GE
Temperature at Variant Current Level
Characteristics
= 25
= 25
= 125
= 15V
= 15V
o
Collector-Emitter Voltage, V
o
Collector-Emitter Voltage, V
C
C
o
C
50
1
2
20V
75
2
12V
15V
I
C
4
= 10A
30A
20A
100
CE
3
CE
[V]
V
[V]
GE
C
10V
[
= 8V
o
C
]
125
4
6
3
Figure 2. Typical Output Characteristics
Figure 6. Saturation Voltage vs. V
Figure 4. Transfer Characteristics
120
120
80
40
80
40
20
16
12
0
0
8
4
0
0
0
0
T
Common Emitter
V
T
T
C
CE
C
C
= 125
= 25
= 125
= 20V
Collector-Emitter Voltage, V
o
2
o
C
o
I
C
C
4
C
Gate-Emitter Voltage, V
Gate-Emitter Voltage,V
20A
= 10A
2
4
20V
8
30A
6
12
12V
Common Emitter
T
4
15V
8
C
GE
GE
= 25
CE
[V]
[V]
V
16
[V]
o
GE
C
10
GE
10V
= 8V
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