FGPF30N45TTU Fairchild Semiconductor, FGPF30N45TTU Datasheet - Page 5

• Manufacturer Part Number: FGPF30N45TTU
• Description: IGBT PDP 450V 30A TO-220F
• Manufacturer: Fairchild Semiconductor

Specifications of FGPF30N45TTU

• Igbt Type: Trench
• Voltage - Collector Emitter Breakdown (max): 450V
• Vce(on) (max) @ Vge, Ic: 1.6V @ 15V, 20A
• Power - Max: 50.4W
• Input Type: Standard
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector (ic) (max): -

FGPF30N45T Rev. A
Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Figure 15. Switching Loss vs. Gate Resistance
Figure 17. Transient Thermal Impedance of IGBT
1000
100
200
100
10
10
5
0
Common Emitter
V
T
T
GE
C
C
= 25
= 125
Collector Current
= 15V, R
o
10
10
C
o
C
Collector Current, I
Gate Resistance, R
E
G
E
on
off
= 15
1E-3
0.01
15
Ω
20
0.1
10
1
1E-5
0.05
0.2
0.1
0.02
0.01
0.5
single pulse
Common Emitter
V
I
T
T
C
CC
C
C
20
30
= 30A
= 25
= 125
= 200V, V
C
G
[A]
1E-4
o
t
[ Ω ]
C
o
d(on)
C
t
r
25
40
GE
= 15V
1E-3
Rectangular Pulse Duration [sec]
30
50
0.01
5
Figure 16. Switching Loss vs.Gate Resistance
Figure 14. Turn-off Characteristics vs.
1000
100
0.1
100
500
10
10
1
5
5
P
Duty Factor, D = t1/t2
Peak T
DM
1
10
10
Collector Current, I
Collector Current, I
j
Collector Current
= Pdm x Zthjc + T
t
1
t
2
15
10
Common Emitter
V
T
T
Common Emitter
V
T
T
20
20
GE
C
C
C
C
C
GE
100
C
= 25
= 125
= 25
= 125
= 15V, R
C
= 15V, R
[A]
t
t
d(off)
[A]
E
f
E
o
o
off
C
o
on
C
o
C
C
25
G
G
= 15
= 15
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Ω
Ω
30
30