IRG4RC10K International Rectifier, IRG4RC10K Datasheet - Page 3

• Manufacturer Part Number: IRG4RC10K
• Description: IGBT UFAST 600V 9A D-PAK
• Manufacturer: International Rectifier

Specifications of IRG4RC10K

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.62V @ 15V, 5A
• Current - Collector (ic) (max): 9A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Package: D-Pak
• Circuit: Discrete
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 600
• Ic @ 25c (a): 9
• Ic @ 100c (a): 5
• Vce(on)@25c Typ (v): 2.39
• Vce(on)@25c Max (v): 2.62
• Ets Typ (mj): 0.26
• Ets Max (mj): 0.32
• Pd @25c (w): 38
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: *IRG4RC10K

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100
10
1
1.0
4
3
2
1
0
0.1
Fig. 2 - Typical Output Characteristics
Square wave:
2.0
V
CE
60% of rated
, Collector-to-Emitter Voltage (V)
Ideal diodes
3.0
voltage
4.0

T = 25 C

J
Fig. 1 - Typical Load Current vs. Frequency

V
20µs PULSE WIDTH
T = 150 C
J
GE
5.0
°
= 15V
°
1
(Load Current = I
6.0
7.0
f, F re q u e n c y (k H z)
RMS
100
of fundamental)
10
For both:
Duty cycle: 50%
T = 125°C
T
Gate drive as specified
Power Dissipation = 1.4W
Fig. 3 - Typical Transfer Characteristics
J
1
sink
5

T = 150 C
= 55°C
J
V
GE
1 0
°
, Gate-to-Emitter Voltage (V)

T = 25 C
J
10
IRG4RC10K
5µs PULSE WIDTH
°
Triangular wave:

V
5µs PULSE WIDTH
CC
Clamp voltage:
80% of rated
15
= 50V
3
1 0 0
20
A