IRG4RC10K International Rectifier, IRG4RC10K Datasheet - Page 5

• Manufacturer Part Number: IRG4RC10K
• Description: IGBT UFAST 600V 9A D-PAK
• Manufacturer: International Rectifier

Specifications of IRG4RC10K

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.62V @ 15V, 5A
• Current - Collector (ic) (max): 9A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Channel Type: N
• Configuration: Single
• Collector-emitter Voltage: 600V
• Gate To Emitter Voltage (max): ±20V
• Pin Count: 2 +Tab
• Mounting: Surface Mount
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Package: D-Pak
• Circuit: Discrete
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 600
• Ic @ 25c (a): 9
• Ic @ 100c (a): 5
• Vce(on)@25c Typ (v): 2.39
• Vce(on)@25c Max (v): 2.62
• Ets Typ (mj): 0.26
• Ets Max (mj): 0.32
• Pd @25c (w): 38
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: *IRG4RC10K

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Fig. 9 - Typical Switching Losses vs. Gate
0.28
0.26
0.24
0.22
0.20
400
300
200
100
0
0

Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
= 25
= 480V
= 15V
= 5A
R
V
20
Collector-to-Emitter Voltage
G
CE
°
, Gate Resistance

C
V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes

C oes
C res
C ies


=
=
=
=
40
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
60
C
ce
(
SHORTED
80
100
100
0.1
10
1
20
16
12
-60 -40 -20
Fig. 10 - Typical Switching Losses vs.
8
4
0

R
V
V
0

GE
CC
V
G
I
CC
C
Fig. 8 - Typical Gate Charge vs.
= 15V
= 480V
= Ohm
= 400V
= 5.0A
T , Junction Temperature ( C )
100
Junction Temperature
J
Q , Total Gate Charge (nC)
4
G
0
Gate-to-Emitter Voltage
20
IRG4RC10K
8
40
60
12
80 100 120 140 160

I =

I =

I =
C
C
C
°
16
2.5
10
5
A
A
A
5
20