IRG4RC10KD International Rectifier, IRG4RC10KD Datasheet - Page 2

• Manufacturer Part Number: IRG4RC10KD
• Description: DIODE IGBT 600V 9.0A D-PAK
• Manufacturer: International Rectifier

Specifications of IRG4RC10KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.62V @ 15V, 5A
• Current - Collector (ic) (max): 9A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Package: D-Pak
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 600
• Ic @ 25c (a): 9
• Ic @ 100c (a): 5
• Vce(on)@25c Typ (v): 2.39
• Vce(on)@25c Max (v): 2.62
• Ets Typ (mj): 0.39
• Ets Max (mj): 0.48
• Qrr Typ Nc 25c: 40
• Qrr Max Nc 25c: 60
• Vf Typ: 1.50
• Pd @25c (w): 38
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: *IRG4RC10KD

IRG4RC10KD
Switching Characteristics @ T
Electrical Characteristics @ T
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
t
E
L
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
sc
d(on)
r
d(off)
f
rr
rr
V
E
V
fe
(BR)CES
CE(on)
GE(th)
on
FM
off
ts
ts
ies
oes
res
g
ge
gc
rr
(rec)M
2
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown Voltageƒ
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance „
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Internal Emitter Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
600
3.0
1.2
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
0.58
2.39 2.62
3.25
2.63
0.25
0.14
0.39 0.48
0.56
140
100
310
220
280
235
-11
1.8
1.5
1.4
2.9
9.8
7.5
7.5
2.9
3.7
19
49
28
97
46
32
29
28
38
40
70
—
—
—
—
—
—
1000
±100
250
150
210
105
6.5
1.8
1.7
4.3
5.2
6.7
29
15
42
57
60
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
V/°C
A/µs
µA
nA
mJ
mJ
nC
nH
nC
ns
pF
V
V
S
V
µs
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
I
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
See Fig. 9,10,14
V
V
T
I
V
Energy losses include "tail"
and diode reverse recovery
Measured 5mm from package
V
V
ƒ = 1.0MHz
T
T
T
T
T
T
T
T
C
C
C
C
C
C
C
C
J
J
J
J
J
J
J
J
J
J
GE
GE
CE
CE
CE
GE
GE
GE
CC
GE
GE
CC
GE
GE
GE
CC
= 5.0A, T
= 4.0A, T
= 5.0A, V
= 5.0A, V
= 5.0A
= 9.0A
= 4.0A
= 5.0A
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 125°C
= 0V, I
= 0V, I
= V
= V
= 50V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15V
= 15V, R
= 360V, T
= 15V, R
= 15V, R
= 0V
= 30V
GE
GE
, I
, I
C
C
J
J
CC
CC
CE
CE
C
C
C
See Fig.
See Fig.
Conditions
Conditions
= 250µA
See Fig.
See Fig.
= 1.0mA
= 150°C
= 150°C
G
G
G
= 250µA
= 250µA
= 5.0A
J
= 600V
= 600V, T
= 480V
= 480V
= 100
= 125°C
= 100
= 100
15
14
17
16
See Fig.8
See Fig. 10,11,14
See Fig. 7
www.irf.com
di/dt = 200A/µs
, V
V
See Fig. 2, 5
See Fig. 13
V
J
GE
R
I
CPK
= 150°C
F
= 200V
= 4.0A
= 15V
< 500V