IRG4RC10KD International Rectifier, IRG4RC10KD Datasheet - Page 5

• Manufacturer Part Number: IRG4RC10KD
• Description: DIODE IGBT 600V 9.0A D-PAK
• Manufacturer: International Rectifier

Specifications of IRG4RC10KD

• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 2.62V @ 15V, 5A
• Current - Collector (ic) (max): 9A
• Power - Max: 38W
• Input Type: Standard
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Package: D-Pak
• Circuit: Co-Pack
• Switching: Hard
• Switching Speed: ULTRAFAST 8-30 kHz
• Vces (v): 600
• Ic @ 25c (a): 9
• Ic @ 100c (a): 5
• Vce(on)@25c Typ (v): 2.39
• Vce(on)@25c Max (v): 2.62
• Ets Typ (mj): 0.39
• Ets Max (mj): 0.48
• Qrr Typ Nc 25c: 40
• Qrr Max Nc 25c: 60
• Vf Typ: 1.50
• Pd @25c (w): 38
• Environmental Options: PbF
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: *IRG4RC10KD

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Fig. 9 - Typical Switching Losses vs. Gate
0.40
0.38
0.36
0.34
0.32
0.30
400
300
200
100
0

0
V
V
T
Fig. 7 - Typical Capacitance vs.
I
J
C
CC
GE
1
Collector-to-Emitter Voltage
= 25
= 480V
= 15V
= 5.0A
R
20
V
G
CE
°
, Gate Resistance
C

Resistance
V
C
C
C
, Collector-to-Emitter Voltage (V)
GE
ies
res
oes

C oes
C res
C ies


40
=
=
=
=
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
60
gc ,
gc
C
ce
(
80
SHORTED
100
100
0.1
10
20
16
12
1
Fig. 10 - Typical Switching Losses vs.
8
4
0
-60 -40 -20
0

R
V
V

V
Fig. 8 - Typical Gate Charge vs.
I
GE
CC
G
CC
C
= 480V
= Ohm
= 15V
= 400V
= 5.0A
Gate-to-Emitter Voltage
Junction Temperature
T , Junction Temperature ( C )
50
Q , Total Gate Charge (nC)
J
4
G
0
IRG4RC10KD
20
8
40
60
12
80 100 120 140 160

I =

I =

I =
C
C
C
°
16
2.5
10
5
A
A
A
5
20