PMBFJ177,215 NXP Semiconductors, PMBFJ177,215 Datasheet - Page 3
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PMBFJ177,215
Manufacturer Part Number
PMBFJ177,215
Description
JFET P-CHAN 30V SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.PMBFJ176215.pdf
(8 pages)
Specifications of PMBFJ177,215
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
1.5mA @ 15V
Drain To Source Voltage (vdss)
30V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
800mV @ 10nA
Input Capacitance (ciss) @ Vds
8pF @ 10V (VGS)
Resistance - Rds(on)
300 Ohm
Mounting Type
Surface Mount
Power - Max
300mW
Configuration
Single
Transistor Polarity
P-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
20 mA
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
30 V
Mounting Style
SMD/SMT
Channel Type
P
Gate-source Voltage (max)
30V
Drain Current (max)
20mA
Drain-gate Voltage (max)
30V
Drain-source Volt (max)
30V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-5033-2
933908930215
PMBFJ177 T/R
PMBFJ177 T/R
PMBFJ177,215
933908930215
PMBFJ177 T/R
PMBFJ177 T/R
PMBFJ177,215
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMBFJ177,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
T
Note
1. Mounted on a ceramic substrate of 8 mm 10 mm 0,7 mm.
April 1995
Drain-source voltage
Gate-source voltage
Gate-drain voltage
Gate current (d.c.)
Total power dissipation
Storage temperature range
Junction temperature
From junction to ambient in free air
Gate cut-off current
Drain cut-off current
Drain current
Gate-source breakdown voltage
Gate-source cut-off voltage
Drain-source ON-resistance
j
= 25 C unless otherwise specified
P-channel silicon field-effect transistors
up to T
V
V
V
I
I
V
G
GS
D
= 1 A; V
DS
DS
DS
= 10 nA; V
= 20 V; V
= 15 V; V
= 15 V; V
= 0,1 V; V
amb
= 25 C
DS
DS
DS
= 0
GS
GS
GS
= 0
= 15 V
= 0
(1)
= 0
= 10 V
3
R
V
I
I
I
V
R
V
V
V
I
P
T
T
GSS
th j-a
(BR)GSS
GS off
stg
j
DS on
GSO
GDO
tot
DSX
DSS
G
DS
max.
max.
max.
max.
max.
max.
=
PMBFJ174
135
20
30
10
85
1
1
5
PMBFJ174 to 177
65 to 150
175
125
70
30
430
300
150
30
30
30
50
1
1
7
3
6
Product specification
176
250
35
30
1
1
2
1
4
2,25
177
300
1,5
0,8
20
30 V
1 nA
1 nA
K/W
V
V
V
mA
mW
C
C
mA
mA
V
V