PMBFJ174,215 NXP Semiconductors, PMBFJ174,215 Datasheet - Page 4

• Manufacturer Part Number: PMBFJ174,215
• Description: JFET P-CHAN 30V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ174,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 20mA @ 15V
• Drain To Source Voltage (vdss): 30V
• Fet Type: P-Channel
• Voltage - Breakdown (v(br)gss): 30V
• Voltage - Cutoff (vgs Off) @ Id: 5V @ 10nA
• Input Capacitance (ciss) @ Vds: 8pF @ 10V (VGS)
• Resistance - Rds(on): 85 Ohm
• Mounting Type: Surface Mount
• Power - Max: 300mW
• Configuration: Single
• Transistor Polarity: P-Channel
• Drain Source Voltage Vds: 30 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 135 mA
• Maximum Operating Temperature: + 150 C
• Maximum Drain Gate Voltage: 30 V
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2081-2; 933908900215; PMBFJ174 T/R

NXP Semiconductors
DYNAMIC CHARACTERISTICS
T
April 1995
handbook, halfpage
Input capacitance, f = 1 MHz
Feedback capacitance, f = 1 MHz
Switching times (see Fig.2  3)
Delay time
Rise time
Turn-on time
Storage temperature
Fall time
Turn-off time
Test conditions:
j
= 25 C unless otherwise specified
P-channel silicon field-effect transistors
V
V
V
GS
GS
GS
= 10 V; V
= V
= 10 V; V
DS
Fig.2 Switching times test circuit
= 0
V in
DS
DS
= 0 V
= 0 V
50 Ω
−V DD
50 Ω
R L
D.U.T
MBK292
V out
C
C
C
t
t
t
t
t
t
V
V
R
V
d
r
on
s
f
off
4
GS off
GS on
is
is
rs
L
DD
Rise time input voltage  1 ns
OUTPUT
INPUT
typ.
typ.
typ.
PMBFJ174
typ.
typ.
typ.
typ.
typ.
typ.
V GSoff
Fig.3 Input and output waveforms
10%
t s
560
10
15
10
12
2
5
7
5
0
t
10%
t
t f
d
s
 t
 t
1200
175
90%
PMBFJ174 to 177
r
f
10
15
10
20
30
= t
= t
5
6
8
0
30
8
4
on
off
2000
176
Product specification
15
20
35
15
20
35
90%
6
6
0
t d
2900 
177
90%
t r
20 ns
25 ns
45 ns
20 ns
25 ns
45 ns
6 V
3 V
0 V
10%
MBK293
pF
pF
pF