PMBFJ620,115 NXP Semiconductors, PMBFJ620,115 Datasheet

JFET N-CHAN DUAL 25V SOT363

PMBFJ620,115

Manufacturer Part Number
PMBFJ620,115
Description
JFET N-CHAN DUAL 25V SOT363
Manufacturer
NXP Semiconductors
Datasheet
1.PMBFJ620115.pdf (13 pages)

Specifications of PMBFJ620,115

Current - Drain (idss) @ Vds (vgs=0)
24mA @ 10V
Drain To Source Voltage (vdss)
25V
Fet Type
2 N-Channel (Dual)
Voltage - Breakdown (v(br)gss)
25V
Voltage - Cutoff (vgs Off) @ Id
2V @ 1µA
Input Capacitance (ciss) @ Vds
5pF @ 10V
Resistance - Rds(on)
50 Ohm
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Power - Max
190mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-2084-2
934057915115
PMBFJ620 T/R
1. Product profile
CAUTION
MSC895
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Two N-channel symmetrical junction field-effect transistors in a SOT363 package.
Table 1:
Symbol Parameter
Per FET
V
V
I
P
DSS
y
DS
GSoff
tot
fs
PMBFJ620
Dual N-channel field-effect transistor
Rev. 01 — 11 May 2004
Two field effect transistors in a single package
Low noise
Interchangeability of drain and source connections
High gain.
AM input stage in car radios
VHF amplifiers
Oscillators and mixers.
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
drain-source voltage
gate-source cut-off
voltage
drain current
total power
dissipation
forward transfer
admittance
Quick reference data
Conditions
V
V
T
V
I
D
s
DS
GS
DS
= 10 mA
= 10 V; I
= 0 V; V
= 10 V;
90 C
DS
D
= 1 A
= 10 V
Min
-
24
-
10
Product data sheet
2
Typ
-
-
-
-
-
Max
60
190
-
25
6.5
Unit
V
V
mA
mW
mS

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PMBFJ620,115 Summary of contents

Page 1

PMBFJ620 Dual N-channel field-effect transistor Rev. 01 — 11 May 2004 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be ...

Page 2

Philips Semiconductors 2. Pinning information Table 2: Pin Ordering information Table 3: Type number PMBFJ620 4. Marking Table 4: Type number PMBFJ620 [ made in Hong Kong ...

Page 3

Philips Semiconductors 5. Limiting values Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per FET GSO V GDO tot T stg Thermal characteristics Table 6: Symbol ...

Page 4

Philips Semiconductors 7. Static characteristics Table 7: Characteristics unless otherwise specified. j Symbol Parameter Per FET V gate-source breakdown (BR)GSS voltage V gate-source cut-off voltage GSoff V gate-source forward voltage GSS I drain-source leakage current DSS ...

Page 5

Philips Semiconductors 50 I DSS (mA Fig 2. Drain current as a function of gate-source cut-off voltage; typical values. 150 g os ...

Page 6

Philips Semiconductors (mA Fig 6. Typical output characteristics (pF ...

Page 7

Philips Semiconductors 2 Fig 10. Drain current as a function of gate-source voltage; typical ...

Page 8

Philips Semiconductors GSS (pA Fig 12. Gate current as a function of junction temperature; typical values. 9397 750 13006 Product data sheet 25 75 Rev. 01 — 11 ...

Page 9

Philips Semiconductors 100 (mS 0.1 10 100 mA amb Fig 13. Input admittance as a function of frequency; typical values ...

Page 10

Philips Semiconductors 9. Package outline Plastic surface mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 ...

Page 11

Philips Semiconductors 10. Revision history Table 9: Revision history Document ID Release date PMBFJ620_1 20040511 9397 750 13006 Product data sheet Data sheet status Change notice Product data - Rev. 01 — 11 May 2004 PMBFJ620 Dual N-channel field-effect transistor ...

Page 12

Philips Semiconductors 11. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 13

Philips Semiconductors 15. Contents 1 Product profi 1.1 General description ...

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