PMBFJ310,215 NXP Semiconductors, PMBFJ310,215 Datasheet

JFET N-CHAN 25V SOT-23

PMBFJ310,215

Manufacturer Part Number
PMBFJ310,215
Description
JFET N-CHAN 25V SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.PMBFJ310215.pdf (14 pages)

Specifications of PMBFJ310,215

Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
24mA @ 10V
Drain To Source Voltage (vdss)
25V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
25V
Voltage - Cutoff (vgs Off) @ Id
2V @ 1µA
Input Capacitance (ciss) @ Vds
5pF @ 10V
Resistance - Rds(on)
50 Ohm
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Transistor Polarity
N-Channel
Drain Source Voltage Vds
25 V
Gate-source Breakdown Voltage
- 25 V
Maximum Operating Temperature
+ 150 C
Maximum Drain Gate Voltage
- 25 V
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-2083-2
934009000215
PMBFJ310 T/R
1. Product profile
CAUTION
MSC895
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package.
Table 1:
Symbol Parameter
V
V
I
P
DSS
y
DS
GSoff
tot
fs
PMBFJ308; PMBFJ309;
PMBFJ310
N-channel silicon field-effect transistors
Rev. 03 — 23 July 2004
Low noise
Interchangeability of drain and source connections
High gain.
AM input stage in car radios
VHF amplifiers
Oscillators and mixers.
The device is supplied in an antistatic package. The gate-source input must be protected
against static discharge during transport or handling.
drain-source voltage
gate-source cut-off voltage
drain current
total power dissipation
forward transfer admittance
Quick reference data
PMBFJ308
PMBFJ309
PMBFJ310
PMBFJ308
PMBFJ309
PMBFJ310
Conditions
V
V
V
V
V
V
up to T
V
DS
DS
DS
GS
GS
GS
DS
= 10 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 0 V; V
= 0 V; V
= 0 V; V
amb
= 25 C
DS
DS
DS
D
D
D
D
= 1 A
= 1 A
= 1 A
= 10 mA
= 10 V
= 10 V
= 10 V
Product data sheet
Min
-
12
12
24
-
10
1
1
2
Typ
-
-
-
-
-
-
-
-
-
Max Unit
60
30
60
250
-
25
6.5 V
4
6.5 V
V
V
mA
mA
mA
mW
mS

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PMBFJ310,215 Summary of contents

Page 1

PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Rev. 03 — 23 July 2004 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION The device is supplied in an antistatic package. The gate-source ...

Page 2

Philips Semiconductors 2. Pinning information Table 2: Pin [1] Drain and source are interchangeable. 3. Ordering information Table 3: Type number PMBFJ308 PMBFJ309 PMBFJ310 4. Marking Table 4: Type number PMBFJ308 PMBFJ309 PMBFJ310 [ ...

Page 3

Philips Semiconductors Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol P tot T stg T j Fig 1. Power derating curve. 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter R thermal resistance from junction ...

Page 4

Philips Semiconductors Table 7: Static characteristics unless otherwise specified. j Symbol Parameter I drain-source leakage current DSS PMBFJ308 PMBFJ309 PMBFJ310 I gate-source leakage current GSS R drain-source on-state resistance DSon y forward transfer admittance fs y ...

Page 5

Philips Semiconductors 50 I DSS (mA Fig 2. Drain current as a function of gate-source cut-off voltage; typical values. 150 g os ...

Page 6

Philips Semiconductors ( 0.75 ...

Page 7

Philips Semiconductors ( 1.5 ...

Page 8

Philips Semiconductors 2 Fig 14. Drain current as a function of gate-source voltage; typical ...

Page 9

Philips Semiconductors GSS (pA Fig 16. Gate current as a function of junction temperature; typical values (mS ...

Page 10

Philips Semiconductors (mS mA amb Fig 19. Reverse transfer admittance; ...

Page 11

Philips Semiconductors 9. Package outline Plastic surface mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 Fig ...

Page 12

Philips Semiconductors 10. Revision history Table 9: Revision history Document ID Release date PMBFJ308_309_310_3 20040723 • Modifications: The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • Table ...

Page 13

Philips Semiconductors 11. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 14

Philips Semiconductors 15. Contents 1 Product profi 1.1 General description ...

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