PMBFJ309,215 NXP Semiconductors, PMBFJ309,215 Datasheet - Page 8

• Manufacturer Part Number: PMBFJ309,215
• Description: MOSFET N-CH 25V 30MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBFJ309,215

• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Package / Case: SOT-23
• Resistance Drain-source Rds (on): 50 Ohms
• Drain Source Voltage Vds: 25 V
• Gate-source Cutoff Voltage: - 4 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: - 25 V
• Drain Current (idss At Vgs=0): 12 mA to 30 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934008990215::PMBFJ309 T/R::PMBFJ309 T/R

Philips Semiconductors
9397 750 13403
Product data sheet
Fig 14. Drain current as a function of gate-source voltage; typical values.
Fig 15. Gate current as a function of drain-gate voltage; typical values.
(1) I
(2) I
(3) I
(4) I
V
T
D
D
D
GSS
j
DS
= 25 C.
= 10 mA.
= 1 mA.
= 100 A.
.
= 10 V; T
I
( A)
(pA)
GSS
I
10
10
10
10
D
j
10
10
10
10
10
= 25 C.
10
10
1
1
3
2
1
2
3
4
3
2
1
2.5
0
2.0
PMBFJ308; PMBFJ309; PMBFJ310
4
Rev. 03 — 23 July 2004
1.5
8
1.0
N-channel silicon field-effect transistors
12
(1)
(2)
(3)
(4)
0.5
V
DG
V
GS
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
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