BFR30,215 NXP Semiconductors, BFR30,215 Datasheet - Page 2
![FET N-CHAN 25V SOT-23](/photos/5/24/52425/nxp_sot-23-3_to-236-3_micro3_ssd3_sst3_sml.jpg)
BFR30,215
Manufacturer Part Number
BFR30,215
Description
FET N-CHAN 25V SOT-23
Manufacturer
NXP Semiconductors
Datasheet
1.BFR30215.pdf
(13 pages)
Specifications of BFR30,215
Mounting Style
SMD/SMT
Configuration
Single
Transistor Polarity
NPN
Maximum Operating Temperature
+ 150 C
Package / Case
SOT-23
Channel Type
N
Gate-source Voltage (max)
25V
Drain-gate Voltage (max)
-25V
Drain-source Volt (max)
25V
Operating Temperature (max)
150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933163480215::BFR30 T/R::BFR30 T/R
NXP Semiconductors
DESCRIPTION
Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
APPLICATIONS
Low level general purpose amplifiers in thick and
PINNING - SOT23
Note
1. Drain and source are interchangeable.
QUICK REFERENCE DATA
1997 Dec 05
V
V
P
I
y
SYMBOL
DSS
thin-film circuits.
DS
GSO
tot
N-channel field-effect transistors
fs
PIN
1
2
3
drain-source voltage
gate-source voltage
total power dissipation
drain current
common-source transfer admittance
BFR30
BFR31
BFR30
BFR31
SYMBOL
d
s
g
PARAMETER
drain
source
gate
(1)
DESCRIPTION
(1)
open drain
T
V
I
D
amb
GS
= 1 mA; V
= 0; V
40 C
2
handbook, halfpage
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling.
DS
CONDITIONS
Marking codes:
BFR30: M1p.
BFR31: M2p.
DS
= 10 V
= 10 V; f = 1 kHz
Fig.1 Simplified outline and symbol.
Top view
1
3
CAUTION
2
4
1
1
1.5
MIN.
BFR30; BFR31
Product specification
g
MAM385
25
25
250
10
5
4
4.5
MAX.
d
s
V
V
mW
mA
mA
mS
mS
UNIT