BFT46,215 NXP Semiconductors, BFT46,215 Datasheet - Page 6

• Manufacturer Part Number: BFT46,215
• Description: FET N-CHAN 25V SOT-23
• Manufacturer: NXP Semiconductors

Specifications of BFT46,215

• Package / Case: TO-236-3, SC-59, SOT-23-3
• Current - Drain (idss) @ Vds (vgs=0): 200µA @ 10V
• Drain To Source Voltage (vdss): 25V
• Current Drain (id) - Max: 10mA
• Fet Type: N-Channel
• Voltage - Cutoff (vgs Off) @ Id: 1.2V @ 0.5nA
• Input Capacitance (ciss) @ Vds: 5pF @ 10V
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Configuration: Single
• Mounting Style: SMD/SMT
• Transistor Polarity: N-Channel
• Drain Source Voltage Vds: 25 V
• Gate-source Cutoff Voltage: 1.2 V
• Gate-source Breakdown Voltage: - 25 V
• Maximum Drain Gate Voltage: 25 V
• Continuous Drain Current: 10 mA
• Drain Current (idss At Vgs=0): 0.2 mA to 1.5 mA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Channel Type: N
• Gate-source Voltage (max): 25V
• Pin Count: 3
• Drain-gate Voltage (max): 25V
• Drain-source Volt (max): 25V
• Operating Temperature (min): -65C
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933410720215; BFT46 T/R; BFT46 T/R

NXP Semiconductors
December 1997
handbook, halfpage
handbook, halfpage
N-channel silicon FET
Fig.8
(μA/V)
Fig.10 Typical values. V
|y os |
(pF)
C rs
10
10
1.5
0.5
10
1
0
1
3
2
0
0
 y
T
amb
os
 versus V
= 25 C.
typ
−1
10
DS
−2
DS
. I
D
= 10 V, T
= 0,4 mA; f = 1 kHz;
20
−3
V DS (V)
V GS (V)
amb
MDA267
MDA271
= 25 C.
30
−4
6
handbook, halfpage
handbook, halfpage
Fig.9 Typical values. V
I GSS
(nA)
(pF)
10
10
10
C is
Fig.11 I
10
−1
−2
−3
6
4
2
0
1
0
0
GSS
−1
versus T
50
j
. V
−2
DS
= 10 V; T
typ
GSS
100
= 10V; V
Product specification
−3
T j (°C)
V GS (V)
amb
MDA266
MDA268
= 25 C.
DS
BFT46
150
−4
= 0.