BSR58,215 NXP Semiconductors, BSR58,215 Datasheet - Page 2
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BSR58,215
Manufacturer Part Number
BSR58,215
Description
MOSFET N-CH 40V 8MA SOT23
Manufacturer
NXP Semiconductors
Datasheet
1.BSR56215.pdf
(6 pages)
Specifications of BSR58,215
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
8mA @ 15V
Drain To Source Voltage (vdss)
40V
Fet Type
N-Channel
Voltage - Breakdown (v(br)gss)
40V
Voltage - Cutoff (vgs Off) @ Id
800mV @ 0.5nA
Resistance - Rds(on)
60 Ohm
Mounting Type
Surface Mount
Power - Max
250mW
Configuration
Single
Mounting Style
SMD/SMT
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
60 Ohms
Drain Source Voltage Vds
40 V
Gate-source Cutoff Voltage
0.8 V to 4 V
Gate-source Breakdown Voltage
40 V
Maximum Drain Gate Voltage
40 V
Continuous Drain Current
80 mA
Drain Current (idss At Vgs=0)
8 mA to 80 mA
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
933410760215
BSR58 T/R
BSR58 T/R
BSR58 T/R
BSR58 T/R
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSR58,215
Manufacturer:
NXP/恩智浦
Quantity:
20 000
Philips Semiconductors
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-effect
transistors in a plastic microminiature
envelope intended for application in
thick and thin-film circuits. The
transistors are intended for
low-power, chopper or switching
applications in industrial service.
PINNING
Note
1. Drain and source are
Marking code
QUICK REFERENCE DATA
April 1991
1
2
3
BSR56 = M4P
BSR57 = M5P
BSR58 = M6P
Drain-source voltage
Total power dissipation up to T
Drain current
Gate-source cut-off voltage
Drain-source resistance (on) at f = 1 kHz
Feedback capacitance at f = 1 MHz
Turn-off time
N-channel FETs
V
V
I
V
I
I
I
D
D
D
D
interchangeable.
V
= drain
= source
= gate
DS
DS
DD
= 0; V
= 20 mA; V
= 10 mA; V
= 5 mA; V
GS
= 15 V; V
= 15 V; I
= 10 V; V
= 10 V; V
GS
= 0
D
GS
GS
= 0.5 nA
GSM
GSM
GSM
DS
= 0
= 0
= 0
= 10 V
= 6 V
= 4 V
amb
= 40 C
handbook, halfpage
Fig.1 Simplified outline and symbol, SOT23.
2
Top view
1
P
I
r
C
t
t
t
DSS
off
off
off
ds on
V
V
tot
rs
DS
(P)GS
3
max.
max.
2
BSR56
BSR56; BSR57; BSR58
250
40
50
10
25
25
4
5
g
MAM385
BSR57
Product specification
d
s
250
100
40
20
40
50
2
6
5
BSR58
250 mW
100 ns
0.8 V
40 V
80 mA
60
8 mA
4 V
5 pF
ns
ns