J176,126 NXP Semiconductors, J176,126 Datasheet - Page 5
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J176,126
Manufacturer Part Number
J176,126
Description
JFET P-CHAN 30V SOT-54
Manufacturer
NXP Semiconductors
Datasheet
1.PMBFJ176215.pdf
(8 pages)
Specifications of J176,126
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
2mA @ 15V
Drain To Source Voltage (vdss)
30V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
1V @ 10nA
Input Capacitance (ciss) @ Vds
8pF @ 10V (VGS)
Resistance - Rds(on)
250 Ohm
Mounting Type
Through Hole
Power - Max
400mW
Configuration
Single
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
250 Ohms
Drain Source Voltage Vds
30 V
Gate-source Cutoff Voltage
1 V to 4 V
Gate-source Breakdown Voltage
30 V
Maximum Drain Gate Voltage
30 V
Continuous Drain Current
35 mA
Drain Current (idss At Vgs=0)
2 mA to 35 mA
Power Dissipation
300 mW
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934005310126
J176 AMO
J176 AMO
J176 AMO
J176 AMO
NXP Semiconductors
PACKAGE OUTLINE
April 1995
P-channel silicon field-effect transistors
Plastic surface-mounted package; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
0.1
A
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
TO-236AB
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
B
0.95
M
e
1
JEITA
scale
B
1
5
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
PMBFJ174 to 177
L p
A
Q
c
Product specification
X
v
ISSUE DATE
M
04-11-04
06-03-16
A
SOT23