J175,116 NXP Semiconductors, J175,116 Datasheet - Page 3
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J175,116
Manufacturer Part Number
J175,116
Description
JFET P-CHAN 30V SOT-54
Manufacturer
NXP Semiconductors
Specifications of J175,116
Package / Case
TO-236-3, SC-59, SOT-23-3
Current - Drain (idss) @ Vds (vgs=0)
7mA @ 15V
Drain To Source Voltage (vdss)
30V
Fet Type
P-Channel
Voltage - Breakdown (v(br)gss)
30V
Voltage - Cutoff (vgs Off) @ Id
3V @ 10nA
Input Capacitance (ciss) @ Vds
8pF @ 10V (VGS)
Resistance - Rds(on)
125 Ohm
Mounting Type
Through Hole
Power - Max
400mW
Configuration
Single
Transistor Polarity
P-Channel
Drain Source Voltage Vds
30 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
70 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934005300116
J175 T/R
J175 T/R
J175 T/R
J175 T/R
Philips Semiconductors
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL RESISTANCE
STATIC CHARACTERISTICS
April 1995
Drain-source voltage
Gate-source voltage
Gate-drain voltage
Gate current (DC)
Total power dissipation
Storage temperature range
Junction temperature
From junction to ambient in free air
T
Gate cut-off current
Drain cut-off current
Drain current
Gate-source breakdown voltage
Gate-source cut-off voltage
Drain-source ON-resistance
j
P-channel silicon field-effect transistors
up to T
V
I
= 25 C unless otherwise specified
G
V
I
V
V
GS
D
DS
= 1 A; V
DS
DS
= 10 nA; V
= 20 V; V
= 15 V; V
= 15 V; V
= 0.1 V; V
amb
= 50 C
DS
DS
GS
= 0
GS
DS
GS
= 0
= 10 V
= 10 V
= 15 V
= 0
3
I
V
V
R
GSS
I
I
(BR)GSS
GS off
DSon
DSX
DSS
V
V
P
T
T
R
I
stg
j
GSO
GDO
tot
V
G
th j-a
DS
max.
max.
min.
max.
min.
min.
max.
max.
max.
max.
max.
max.
max.
max.
=
J174 J175
135
20
30
10
85
1
1
5
125
70
30
1
1
7
3
6
65 to 150
250
Product specification
400
150
J176 J177
J174; J175;
30
30
30
50
J176; J177
250
35
30
1
1
2
1
4
2.25 V
300
1.5 mA
0.8 V
20 mA
30 V
1 nA
1 nA
V
V
V
mA
mW
K/W
C
C