FDY3000NZ Fairchild Semiconductor, FDY3000NZ Datasheet - Page 3
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FDY3000NZ
Manufacturer Part Number
FDY3000NZ
Description
MOSFET N-CH DUAL SC89
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Type
Power MOSFETr
Datasheet
1.FDY3000NZ.pdf
(6 pages)
Specifications of FDY3000NZ
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
700 mOhm @ 600mA, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
600mA
Vgs(th) (max) @ Id
1.3V @ 250µA
Gate Charge (qg) @ Vgs
1.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
60pF @ 10V
Power - Max
446mW
Mounting Type
Surface Mount
Package / Case
SC-89-6, SOT-666
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.7 Ohm @ 4.5 V
Forward Transconductance Gfs (max / Min)
1.8 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
0.6 A
Power Dissipation
625 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
2
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.7Ohm
Drain-source On-volt
20V
Gate-source Voltage (max)
±12V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SC-89
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDY3000NZTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDY3000NZ
Manufacturer:
Fairchild Semiconductor
Quantity:
74 306
Typical Characteristics
FDY3000NZ Rev B
1.6
1.4
1.2
0.8
0.6
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
1
Figure 3. On-Resistance Variation with
1
0
1
0
-50
0.5
Figure 1. On-Region Characteristics.
0
Figure 5. Transfer Characteristics.
V
I
V
V
D
DS
GS
GS
= 600mA
-25
= 5V
= 4.5V
= 4.5V
3.5V
V
0.25
T
V
GS
0
1
J
DS
, JUNCTION TEMPERATURE (
, GATE TO SOURCE VOLTAGE (V)
Temperature.
, DRAIN-SOURCE VOLTAGE (V)
3.0V
T
A
25
= 125
2.5V
o
C
1.5
0.5
50
-55
75
o
C
25
o
C
0.75
o
100
C)
2
2.0V
125
2.5
150
1
Figure 6. Body Diode Forward Voltage Variation
0.0001
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.001
0.01
1
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
Figure 2. On-Resistance Variation with
Figure 4. On-Resistance Variation with
0.1
with Source Current and Temperature.
2
1
1
1
0
0
Drain Current and Gate Voltage.
V
V
GS
GS
T
A
= 0V
= 2.0V
= 25
Gate-to-Source Voltage.
0.2
V
0.2
o
SD
C
V
, BODY DIODE FORW ARD VOLTAGE (V)
GS
2
T
, GATE TO SOURCE VOLTAGE (V)
2.5V
A
= 125
0.4
I
D
, DRAIN CURRENT (A)
o
C
0.4
3.0V
25
3
0.6
o
T
C
A
= 125
-55
0.6
o
C
o
3.5V
C
0.8
www.fairchildsemi.com
4
0.8
I
D
1
= 300mA
4.5V
1.2
1
5