FDY3000NZ Fairchild Semiconductor, FDY3000NZ Datasheet - Page 4

• Manufacturer Part Number: FDY3000NZ
• Description: MOSFET N-CH DUAL SC89
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDY3000NZ

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 700 mOhm @ 600mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 600mA
• Vgs(th) (max) @ Id: 1.3V @ 250µA
• Gate Charge (qg) @ Vgs: 1.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 60pF @ 10V
• Power - Max: 446mW
• Mounting Type: Surface Mount
• Package / Case: SC-89-6, SOT-666
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.7 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 1.8 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.6 A
• Power Dissipation: 625 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 2
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.7Ohm
• Drain-source On-volt: 20V
• Gate-source Voltage (max): ±12V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SC-89
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDY3000NZTR

Typical Characteristics
FDY3000NZ Rev B
0.01
0.1
0.01
10
Figure 9. Maximum Safe Operating Area.
5
4
3
2
1
0
0.1
1
Figure 7. Gate Charge Characteristics.
0.1
0.0001
0
1
I
R
D
DS(ON)
= 600mA
D = 0.5
SINGLE PULSE
R
V
JA
0.2
T
LIMIT
GS
0.1
0.05
0.02
A
= 280
= 25
0.01
= 4.5V
0.2
SINGLE PULSE
o
o
V
C/W
C
DS
, DRAIN-SOURCE VOLTAGE (V)
0.001
Q
1
g
, GATE CHARGE (nC)
0.4
V
DS
1s
DC
= 5V
Figure 11. Transient Thermal Response Curve.
10s
100ms
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
0.6
10V
10ms
0.01
10
1ms
15V
0.8
0.1
100
1
t
1
, TIME (sec)
100
90
80
70
60
50
40
30
20
10
30
25
20
15
10
0.0001
0
5
0
0
Figure 8 . Capacitance Characteristics.
1
C
Figure 10. Single Pulse Maximum
rss
0.001
4
V
C
Power Dissipation.
DS
oss
0.01
, DRAIN TO SOURCE VOLTAGE (V)
10
t
8
0.1
1
, TIME (sec)
C
iss
P(pk)
Duty Cycle, D = t
T
1
R
R
J
12
JA
- T
JA
(t) = r(t) * R
100
A
t
=280 °C/W
1
= P * R
t
2
10
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SINGLE PULSE
R
JA
T
A
= 280°C/W
16
= 25°C
JA
1
100
JA
(t)
/ t
V
f = 1MHz
2
GS
= 0 V
1000
1000
20