DMN5L06DWK-7 Diodes Inc, DMN5L06DWK-7 Datasheet
DMN5L06DWK-7
Manufacturer Part Number
DMN5L06DWK-7
Description
MOSFET DUAL N-CH 50V SOT-363
Manufacturer
Diodes Inc
Datasheet
1.DMN5L06DWK-7.pdf
(4 pages)
Specifications of DMN5L06DWK-7
Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2 Ohm @ 50mA @ 5V
Drain To Source Voltage (vdss)
50V
Current - Continuous Drain (id) @ 25° C
305mA
Vgs(th) (max) @ Id
1V @ 250µA
Input Capacitance (ciss) @ Vds
50pF @ 25V
Power - Max
250mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Configuration
Dual
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
2 Ohm @ 5 V
Drain-source Breakdown Voltage
50 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.305 A
Power Dissipation
250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
DMN5L06DWKDITR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
DMN5L06DWK-7
Manufacturer:
DIODES
Quantity:
36 000
Company:
Part Number:
DMN5L06DWK-7
Manufacturer:
Diodes Inc
Quantity:
34 985
Part Number:
DMN5L06DWK-7
Manufacturer:
DIODES/美台
Quantity:
20 000
Thermal Characteristics
Electrical Characteristics
Maximum Ratings
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Features
•
•
•
•
•
•
•
•
•
•
•
Notes:
DMN5L06DWK
Document number: DS30930 Rev. 4 - 2
Dual N-Channel MOSFET
Low On-Resistance (1.0V max)
Very Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Lead Free By Design/RoHS Compliant (Note 2)
ESD Protected up to 2kV
"Green" Device (Note 4)
Qualified to AEC-Q101 standards for High Reliability
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
ESD protected up to 2kV
Characteristic
Characteristic
Characteristic
@T
A
= 25°C unless otherwise specified
@T
@T
A
A
= 25°C unless otherwise specified
= 25°C unless otherwise specified
Pulsed (Note 3)
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
@ T
Continuous
TOP VIEW
C
= 25°C
www.diodes.com
SOT-363
Symbol
R
BV
V
I
DS (ON)
I
I
D(ON)
C
1 of 4
|Y
V
C
C
GS(th)
DSS
GSS
oss
SD
rss
DSS
iss
fs
|
Mechanical Data
•
•
•
•
•
•
•
•
Symbol
Symbol
T
V
j
V
R
, T
P
DSS
GSS
I
θ JA
D
0.49
D
Min
200
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
STG
0.5
0.5
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Internal Schematic
D
S
2
2
TOP VIEW
G
G
2
1
Typ
1.4
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
S
D
1
1
-65 to +150
Max
500
1.0
3.0
2.5
2.0
1.4
5.0
60
50
50
25
⎯
⎯
⎯
1
Value
Value
±20
305
800
250
500
50
Unit
mS
nA
μA
nA
nA
pF
pF
pF
V
V
Ω
A
V
V
V
V
V
V
V
V
V
V
V
V
V
V
f = 1.0MHz
DMN5L06DWK
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
DS
GS
DS
= 0V, I
= 50V, V
= ±12V, V
= ±10V, V
= ±5V, V
= V
= 1.8V, I
= 2.5V, I
= 5.0V, I
= 10V, V
=10V, I
= 0V, I
= 25V, V
Test Condition
GS
© Diodes Incorporated
, I
November 2007
°C/W
Unit
Unit
D
mW
S
mA
D
°C
D
V
V
= 10μA
= 115mA
GS
D
D
D
GS
DS
DS
= 0.2A
= 250μA
DS
DS
= 50mA
= 50mA
= 50mA
= 0V
= 0V
= 7.5V
= 0V
= 0V
= 0V
Related parts for DMN5L06DWK-7
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
MOSFET N-CH 50V 280MA SOT23-3
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) 240V 350mW
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) -
Manufacturer:
Diodes Inc
Part Number:
Description:
Diodes (General Purpose, Power, Switching) -
Manufacturer:
Diodes Inc
Part Number:
Description:
Diodes (General Purpose, Power, Switching) NPN Small SIG 50V 45V VCEO 6.0V VEBO
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) NPN Small SIG 30V 30V VCEO 5.0V VEBO
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) NPN Small SIG -80V -65V VCEO -5.0 VEBO
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) NPN Small SIG -50V -45V VCEO 6.0V VEBO
Manufacturer:
Diodes Inc
Part Number:
Description:
Diodes (General Purpose, Power, Switching) Dual Switching DIODE 100V Vrm 75Vrrm 53Vr
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) Vr/80V Io/125mA T/R
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) HV DUAL SW DIODE 300V
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) 80V 150mW
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) 75V 150mW
Manufacturer:
Diodes Inc
Datasheet:
Part Number:
Description:
Diodes (General Purpose, Power, Switching) 200MW 80V
Manufacturer:
Diodes Inc
Part Number:
Description:
Diodes (General Purpose, Power, Switching) 100V Io/150mA T/R INVALID P/N
Manufacturer:
Diodes Inc
DMN5L06DWK-7 Summary of contents
Page 1
... I C DSS ⎯ I GSS V 0.49 GS(th) ⎯ ⎯ (ON) ⎯ 0.5 I D(ON) 200 | 0 ⎯ C iss ⎯ C oss ⎯ C rss www.diodes.com DMN5L06DWK Value Unit 50 V ±20 V 305 mA 800 Value Unit 250 mW °C/W 500 °C -65 to +150 Typ Max Unit Test Condition ⎯ ⎯ 0V 10μ ...
Page 2
... Fig. 5 Static Drain-Source On-Resistance vs. Drain Current DMN5L06DWK Document number: DS30930 Rev 100 150 125 Fig. 4 Static Drain-Source On-Resistance vs. Drain Current www.diodes.com DMN5L06DWK V , GATE-SOURCE VOLTAGE (V) GS Fig. 2 Typical Transfer Characteristics I DRAIN CURRENT ( GATE SOURCE VOLTAGE (V) GS, Fig. 6 Static Drain-Source On-Resistance vs. Gate-Source Voltage November 2007 ...
Page 3
... Static Drain-Source On-State Resistance vs. Ambient Temperature 250 200 150 100 AMBIENT TEMPERATURE ( C) A Fig. 11 Derating Curve - Total DMN5L06DWK Document number: DS30930 Rev ° Fig.10 Forward Transfer Admittance vs. Drain Current 100 150 ° www.diodes.com DMN5L06DWK DRAIN CURRENT (A) D November 2007 © Diodes Incorporated ...
Page 4
... Ordering Information (Note 6) Part Number DMN5L06DWK-7 Notes: 6. For packaging details our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information Date C ode Ke y Year 2006 Code T Month Code 1 2 Package Outline Dimensions Suggested Pad Layout Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product described herein ...