DMN5L06DWK-7 Diodes Inc, DMN5L06DWK-7 Datasheet - Page 2

• Manufacturer Part Number: DMN5L06DWK-7
• Description: MOSFET DUAL N-CH 50V SOT-363
• Manufacturer: Diodes Inc

Specifications of DMN5L06DWK-7

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2 Ohm @ 50mA @ 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 305mA
• Vgs(th) (max) @ Id: 1V @ 250µA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2 Ohm @ 5 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.305 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: DMN5L06DWKDITR

DMN5L06DWK
V , DRAIN-SOURCE VOLTAGE (V)
V
, GATE-SOURCE VOLTAGE (V)
DS
GS
Fig. 2 Typical Transfer Characteristics
Fig. 1 Typical Output Characteristics
10
1
0
0
-25
25
75
100
150
-50
0
50
125
I DRAIN CURRENT (A)
T , CHANNEL TEMPERATURE (°C)
D ,
ch
Fig. 4 Static Drain-Source On-Resistance vs. Drain Current
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
10
1
I , DRAIN CURRENT (A)
V
GATE SOURCE VOLTAGE (V)
GS,
D
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
Fig. 6 Static Drain-Source On-Resistance
vs. Gate-Source Voltage
DMN5L06DWK
2 of 4
November 2007
www.diodes.com
© Diodes Incorporated
Document number: DS30930 Rev. 4 - 2