FDC6327C Fairchild Semiconductor, FDC6327C Datasheet - Page 3

• Manufacturer Part Number: FDC6327C
• Description: MOSFET N/P-CH DUAL 20V SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6327C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 1.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 325pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 7.7 S, 4.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.7 A @ N Channel or 1.9 A @ P Channel
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6327C; FDC6327CTR

Notes:
1: R
2: Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Electrical Characteristics
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
Symbol
d(on)
r
d(off)
f
S
equally.
R
SD
g
gs
gd
Scale 1 : 1 on letter size paper
JA
JC
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward
Voltage
a) 130 C/W when
Parameter
mounted on a 0.125 in
pad of 2 oz. copper.
JA
is determined by the user's board design. Both devices are assumed to be operating and sharing the dissipated heat energy
2
(Note 2)
N-Channel
V
V
P-Channel
V
V
N-Channel
V
P-Channel
V
V
V
(continued)
DD
GS
DD
GS
DS
DS
GS
GS
= 10 V, I
= -10 V, I
= 10 V, I
= -10 V, I
= 4.5V, R
= -4.5 V, R
= 0 V, I
= 0 V, I
Test Conditions
S
S
D
D
= 0.8 A
= - 0.8 A
D
D
GEN
b) 140 C/W when
= 1 A,
= 2.7 A, V
= -1 A,
GEN
= -1.9 A,V
mounted on a 0.005 in
pad of 2 oz. copper.
T
= 6
A
= 6
= 25°C unless otherwise noted
(Note 2)
(Note 2)
GS
GS
= 4.5V
= -4.5V
2
Type Min
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Typ Max Units
-0.79
3.25
2.85
0.65
0.68
0.90
0.65
0.76
c) 180 C/W when
14
12
14
5
7
9
3
3
mounted on a 0.0015 in
pad of 2 oz. copper.
-0.8
-1.2
4.5
4.0
0.8
1.2
15
14
18
25
22
25
9
9
FDC6327C, Rev. E
nC
nC
nC
ns
ns
ns
ns
A
V
2