FDC6327C Fairchild Semiconductor, FDC6327C Datasheet - Page 6

• Manufacturer Part Number: FDC6327C
• Description: MOSFET N/P-CH DUAL 20V SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDC6327C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 80 mOhm @ 2.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 1.9A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4.5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 325pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Configuration: Dual
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.08 Ohm @ 4.5 V @ N Channel
• Forward Transconductance Gfs (max / Min): 7.7 S, 4.5 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 2.7 A @ N Channel or 1.9 A @ P Channel
• Power Dissipation: 960 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDC6327C; FDC6327CTR

Typical Characteristics: P-Channel
10
10
8
6
4
2
0
8
6
4
2
0
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0
0
Figure 11. On-Region Characteristics.
1
-50
Figure 15. Transfer Characteristics.
Figure 13. On-Resistance Variation
V
DS
I
V
D
= -5V
GS
= -1.9A
-25
= -4.5V
V
1
GS
-V
-V
with Temperature.
= -4.5V
1
GS
T
DS
0
J
, GATE TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
, DRAIN-SOURCE VOLTAGE (V)
-3.5V
25
-3.0V
2
2
50
-2.5V
T
A
3
= -55
75
-2.0V
o
C
100
-1.5V
o
25
C)
3
o
C
4
125
125
o
C
150
5
4
0.5
0.4
0.3
0.2
0.1
0.0001
0.001
0
0.01
Figure 16. Body Diode Forward Voltage
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.1
1
10
with Drain Current and Gate Voltage.
2
1
1
Figure 12. On-Resistance Variation
Figure 14. On-Resistance Variation
0
0
V
Variation with Source Current
with Gate-to-Source Voltage.
GS
V
= 0V
GS
= -2.0V
-V
-V
SD
2
and Temperature.
2
GS
, BODY DIODE FORWARD VOLTAGE (V)
T
0.4
A
, GATE TO SOURCE VOLTAGE (V)
= 125
-I
-2.5V
D
25
, DIRAIN CURRENT (A)
o
C
o
-55
C
4
o
C
-3.0V
3
0.8
T
T
A
A
= 125
= 25
6
-3.5V
o
C
o
C
-4.0V
1.2
4
8
-4.5V
I
FDC6327C, Rev. E
D
= -1A
1.6
10
5