SI1972DH-T1-E3 Vishay, SI1972DH-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI1972DH-T1-E3
• Description: MOSFET N-CH DUAL 30V 1.3A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1972DH-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 2.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 75pF @ 15V
• Power - Max: 740mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.225 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.3 A
• Power Dissipation: 740 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 344mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 2.8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1972DH-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 74398
S10-0721-Rev. B, 29-Mar-10
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
4
3
2
1
0
0.0
0.0
0
I
D
= 1.3 A
On-Resistance vs. Drain Current
0.4
V
0.5
DS
Output Characteristics
V
V
1
Q
DS
GS
V
g
- Drain-to-Source Voltage (V)
GS
- Total Gate Charge (nC)
I
= 15 V
= 4.5 V
Gate Charge
D
= 10 V
- Drain Current (A)
0.8
1.0
V
2
GS
1.2
= 10 V thru 5 V
V
DS
= 24 V
1.5
3
1.6
4 V
3 V
2.0
2.0
4
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
1.0
0.8
0.6
0.4
0.2
0.0
80
60
40
20
0
- 50
0
0
On-Resistance vs. Junction Temperature
C
rss
- 25
5
V
V
GS
DS
Transfer Characteristics
T
1
0
J
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
10
Capacitance
V
25
GS
C
oss
= 10 V and 4.5 V, I
15
50
2
T
T
C
T
Vishay Siliconix
C
C
C
= - 55 °C
iss
= 125 °C
= 25 °C
75
20
Si1972DH
100
3
D
www.vishay.com
= 1.3 A
25
125
150
30
4
3