SI1972DH-T1-E3 Vishay, SI1972DH-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI1972DH-T1-E3
• Description: MOSFET N-CH DUAL 30V 1.3A SC70-6
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI1972DH-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 225 mOhm @ 1.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 2.8V @ 250µA
• Gate Charge (qg) @ Vgs: 2.8nC @ 10V
• Input Capacitance (ciss) @ Vds: 75pF @ 15V
• Power - Max: 740mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.225 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 1.3 A
• Power Dissipation: 740 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.3A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 344mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 2.8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI1972DH-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 74398
S10-0721-Rev. B, 29-Mar-10
2.4
2.0
1.6
1.2
0.8
0.4
0.0
0
Package Limited
25
D
is based on T
T
C
Current Derating*
50
- Case Temperature (°C)
75
J(max)
100
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
125
150
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25
50
T
C
- Case Temperature (°C)
Power Derating
75
Vishay Siliconix
100
Si1972DH
www.vishay.com
125
150
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