FDS4897C Fairchild Semiconductor, FDS4897C Datasheet - Page 5

• Manufacturer Part Number: FDS4897C
• Description: MOSFET N/P-CH 40V 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS4897C

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 29 mOhm @ 6.2A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 6.2A, 4.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 10V
• Input Capacitance (ciss) @ Vds: 760pF @ 20V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 0.029 Ohm @ 10 V @ N Channel
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.2 A @ N Channel or 4.4 A @ P Channel
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS4897CTR

Typical Characteristics: Q1 (N-Channel)
FDS4897C Rev C(W)
0.01
100
0.1
10
50
40
30
20
10
10
8
6
4
2
0
Figure 9. Maximum Safe Operating Area.
0
0.001
1
Figure 11. Single Pulse Maximum Peak
0.1
Figure 7. Gate Charge Characteristics.
0
R
SINGLE PULSE
R
DS(ON)
θ JA
V
I
T
D
GS
A
= 135
= 7A
= 25
= 10.0V
LIMIT
0.01
o
o
C
C/W
V
4
DS
, DRAIN-SOURCE VOLTAGE (V)
0.1
Q
1
g
, GATE CHARGE (nC)
Current.
t
1
, TIME (sec)
DC
10s
1
8
V
1s
DS
100ms
= 10V
10
10ms
10
20V
SINGLE PULSE
R
12
1ms
θ JA
T
A
30V
= 135°C/W
100
= 25°C
100 μ s
1000
100
16
1000
100
800
600
400
200
Figure 12. Unclamped Inductive Switching
10
50
40
30
20
10
0
1
0
0.001
0.01
Figure 8. Capacitance Characteristics.
0
C
T
Figure 10. Single Pulse Maximum
J
rss
= 25
5
o
0.01
C
V
Power Dissipation.
10
DS
, DRAIN TO SOURCE VOLTAGE (V)
C
t
AV
oss
0.1
0.1
Capability.
, TIME IN AVANCHE(ms)
15
t
1
, TIME (sec)
20
1
25
C
10
1
iss
SINGLE PULSE
R
θ JA
30
T
A
www.fairchildsemi.com
= 135°C/W
= 25°C
100
f = 1 MHz
V
GS
35
= 0 V
1000
10
40