FDS6930B Fairchild Semiconductor, FDS6930B Datasheet - Page 2

• Manufacturer Part Number: FDS6930B
• Description: MOSFET N-CH DUAL 30V 5.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6930B

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 38 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.8nC @ 5V
• Input Capacitance (ciss) @ Vds: 412pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.038 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6930BTR

FDS6930B Rev. A2
Electrical Characteristics
Notes:
1. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
3. Trr parameter will not be subjected to 100% production testing.
Symbol
Off Characteristics
BV
∆BV
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
R
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
FS
GS(th)
SD
∆T
∆T
DS(on)
iss
oss
rss
G
R
g
gs
gd
rr
GS(th)
θJA
θJC
DSS
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
is guaranteed by design while R
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Source Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
(Note 2)
a) 78°C/W when mounted
on a 0.5 in
copper
Parameter
(Note 2)
θCA
is determined by the user's board design.
2
pad of 2 oz
T
A
= 25°C unless otherwise noted
(note3)
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
D
D
F
GS
GS
GS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DS
DS
DD
DS
= 5.5 A, d
= 250 µA, Referenced to 25 °C
= 250 µA, Referenced to 25 °C
= 0 V, I
= 24 V, V
= 24 V, V
= ±20 V, V
= V
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, V
= 5 V, I
= 15 V, V
= 15 mV, f = 1.0 MHz
= 15 V, I
= 10 V, R
= 15 V, I
= 5 V
= 0 V, I
GS
Test Conditions
2
b) 125°C/W when
, I
D
D
S
iF
D
D
mounted on a 0.02 in
pad of 2 oz copper
D
D
D
= 250 µA
GS
GS
D
= 5.5 A
= 1.3 A
DS
/d
GEN
GS
= 250 µA
= 5.5 A,
= 5.5 A
= 5.5 A, T
DS
= 1 A,
= 4.8 A
t
= 100 A/µs
= 0 V
= 0 V, T
= 5 V
= 0 V,
= 0 V
= 6 Ω
(Note 2)
J
J
= 55 °C
= 125 °C
2
Min
30
20
1
Typ
–4.6
310
1.9
1.9
3.2
1.0
1.2
0.8
26
31
40
45
19
90
40
16
16
6
6
6
2
c) 135°C/W when
mounted on a
minimum pad.
Max
±100
412
120
1.3
1.2
60
10
38
50
62
12
12
28
32
4.5
4
1
3
www.fairchildsemi.com
Units
mV/ °C
mV/ °C
m Ω
nC
µA
nA
pF
nC
nC
nS
nC
pF
pF
ns
ns
ns
ns
Ω
V
V
A
S
A
V