FDS6930B Fairchild Semiconductor, FDS6930B Datasheet - Page 4

• Manufacturer Part Number: FDS6930B
• Description: MOSFET N-CH DUAL 30V 5.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6930B

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 38 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 3.8nC @ 5V
• Input Capacitance (ciss) @ Vds: 412pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.038 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 19 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.5 A
• Power Dissipation: 2000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6930BTR

FDS6930B Rev. A2
Typical Characteristics
0.01
100
0.1
10
10
1
0.01
0.001
8
6
4
2
0
0.01
Figure 9. Maximum Safe Operating Area.
0
0.1
0.0001
I
Figure 7. Gate Charge Characteristics.
1
D
SINGLE PULSE
R
= 5.5A
θ JA
V
T
GS
A
= 135°C/W
= 25°C
= 10.0V
R
1
D = 0.5
DS(ON)
0.2
0.1
0.1
V
0.05
DS
0.02
LIMIT
, DRAIN-SOURCE VOLTAGE (V)
0.01
SINGLE PULSE
Q
0.001
2
g
, GATE CHARGE (nC)
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
V
DS
DC
1
3
Figure 11. Transient Thermal Response Curve.
= 5V
10s
10V
1s
0.01
100ms
4
10ms
10
15V
1ms
5
100µs
0.1
100
6
t
1
, TIME (sec)
4
500
400
300
200
100
50
40
30
20
10
0
0
0.001
0
1
Figure 8. Capacitance Characteristics.
C
rss
Figure 10. Single Pulse Maximum
0.01
V
DS
5
Power Dissipation.
, DRAIN TO SOURCE VOLTAGE (V)
10
C
oss
0.1
t
1
, TIME (sec)
P(pk)
Duty Cycle, D = t
T
10
R
J
R
θ JA
- T
θ JA
(t) = r(t) * R
100
A
t
1
= 135°C/W
1
C
= P * R
t
iss
2
SINGLE PULSE
R
θ JA
θ JA
θ JA
1
15
T
(t)
/ t
A
= 135°C/W
10
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2
= 25°C
f = 1 MHz
V
GS
1000
= 0 V
100
20