FDMB3800N Fairchild Semiconductor, FDMB3800N Datasheet - Page 3

• Manufacturer Part Number: FDMB3800N
• Description: MOSFET N-CH DUAL 30V MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMB3800N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 465pF @ 15V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, MicroFET™
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 4.8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.032ohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMB3800NTR

FDMB3800N Rev.C1
Typical Characteristics
10
15
12
8
6
4
2
0
9
6
3
0
0
1.5
1.6
1.4
1.2
0.8
0.6
V
Figure 3. Normalized On - Resistance
1
GS
V
-50
Figure 1.
DS
Figure 5. Transfer Characteristics
= 10V
6.0V
= 5V
V
I
D
GS
= 4.8A
-25
0.25
= 10V
vs Junction Temperature
2
V
V
GS
DS
On Region Characteristics
, GATE TO SOURCE VOLTAGE (V)
, DRAIN-SOURCE VOLTAGE (V)
T
0
J
, JUNCTION TEMPERATURE (
4.5V
0.5
2.5
25
3.5V
50
T
0.75
T
3
J
J
75
= 25°C unless otherwise noted
= -55
o
C
3.0V
o
100
C)
3.5
125
1
o
C
125
25
2.5V
o
C
150
1.25
4
3
0.102
0.092
0.082
0.072
0.062
0.052
0.042
0.032
0.022
0.0001
2.8
2.6
2.4
2.2
1.8
1.6
1.4
1.2
0.8
0.001
2
1
0.01
0.1
10
0
Figure 2.
Figure 4.
1
2
V
Forward Voltage vs Source Current
vs Drain Current and Gate Voltage
0
Figure 6.
GS
V
= 3.0V
GS
T
J
= 0V
= 25
3
0.2
2
o
Normalized On - Resistance
C
V
V
On- Resistance vs Gate to
SD
GS
4
Source Voltage
T
, BODY DIODE FORWARD VOLTAGE (V)
Source to Drain Diode
3.5V
, GATE TO SOURCE VOLTAGE (V)
J
= 125
I
D
, DRAIN CURRENT (A)
0.4
o
5
4
C
4.0V
T
J
25
= 125
o
6
C
0.6
o
4.5V
C
6
7
0.8
-55
6.0V
o
C
8
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8
I
D
1
= 2.4A
10V
9
10
1.2
10