FDMB3800N Fairchild Semiconductor, FDMB3800N Datasheet - Page 6

• Manufacturer Part Number: FDMB3800N
• Description: MOSFET N-CH DUAL 30V MICROFET
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDMB3800N

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 40 mOhm @ 4.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.8A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 5.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 465pF @ 15V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: 8-MLP, MicroFET™
• Configuration: Dual Dual Drain
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.04 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 14 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.8 A
• Power Dissipation: 1600 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Module Configuration: Dual
• Continuous Drain Current Id: 4.8A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.032ohm
• Rds(on) Test Voltage Vgs: 10V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDMB3800NTR

Dimensional Outline and Pad Layout
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FDMB3800N Rev.C1