SI5509DC-T1-E3 Vishay, SI5509DC-T1-E3 Datasheet - Page 15

• Manufacturer Part Number: SI5509DC-T1-E3
• Description: MOSFET N/P-CH 20V CHIPFET 1206-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI5509DC-T1-E3

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 52 mOhm @ 5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5A, 3.9A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 6.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 455pF @ 10V
• Power - Max: 2.1W
• Mounting Type: Surface Mount
• Package / Case: 1206-8 ChipFET™
• Transistor Polarity: N And P Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 43mohm
• Rds(on) Test Voltage Vgs: 5V
• Threshold Voltage Vgs Typ: 2V
• Configuration: Dual Dual Drain
• Resistance Drain-source Rds (on): 0.052 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 5 A, - 3.9 A
• Power Dissipation: 2.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI5509DC-T1-E3TR

Application Note 826
Vishay Siliconix
®
RECOMMENDED MINIMUM PADS FOR 1206-8 ChipFET
0.093
(2.357)
0.026
0.016
0.010
(0.650)
(0.406)
(0.244)
Recommended Minimum Pads
Dimensions in Inches/(mm)
Return to Index
Return to Index
www.vishay.com
Document Number: 72593
2
Revision: 21-Jan-08