ZXMC3AM832TA Diodes Zetex, ZXMC3AM832TA Datasheet - Page 3

• Manufacturer Part Number: ZXMC3AM832TA
• Description: MOSFET N+P 30V 2.7A 8MLP 3 X 2
• Manufacturer: Diodes Zetex

Specifications of ZXMC3AM832TA

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMC3AM832TATR

PROVISIONAL ISSUE E - JULY 2004
100m
10m
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
80
60
40
20
100µ 1m
1
0
0.1
Power Dissipation v Board Area
N-channel Safe Operating Area
Transient Thermal Impedance
Note (a)(f)
R
Limited
Note (a)(f)
T
T
Continuous
D=0.5
Single Pulse, T
D=0.2
DC
amb
j max
DS(ON)
V
DS
=25°C
=150°C
1s
Drain-Source Voltage (V)
2oz copper
Note (f)
100ms
Board Cu Area (sqcm)
1
10m 100m
Pulse Width (s)
1
10ms
amb
=25°C
1oz copper
Note (f)
1ms
2oz copper
Note (g)
D=0.1
1
D=0.05
100us
Single Pulse
TYPICAL CHARACTERISTICS
10
10
10
1oz copper
Note (g)
100
100
1k
3
100m
10m
225
200
175
150
125
100
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
75
50
25
10
0
1
0.1
Thermal Resistance v Board Area
0
P-channel Safe Operating Area
Note (a)(f)
R
Limited
Single Pulse, T
DS(ON)
-V
DC 1s
1oz Cu
Note (d)(f)
2oz copper
Note (f)
DS
25
100ms
Drain-Source Voltage (V)
Board Cu Area (sqcm)
1
Derating Curve
Temperature (°C)
50
1
amb
2oz Cu
Note (e)(g)
1oz copper
Note (f)
10ms
=25°C
ZXMC3AM832
2oz copper
Note (g)
75
2oz Cu
Note (a)(f)
1ms
100
100us
10
10
1oz Cu
Note (d)(g)
1oz copper
Note (g)
125
150
100