ZXMC3AM832TA Diodes Zetex, ZXMC3AM832TA Datasheet - Page 8

• Manufacturer Part Number: ZXMC3AM832TA
• Description: MOSFET N+P 30V 2.7A 8MLP 3 X 2
• Manufacturer: Diodes Zetex

Specifications of ZXMC3AM832TA

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 120 mOhm @ 2.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.9A, 2.1A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 3.9nC @ 10V
• Input Capacitance (ciss) @ Vds: 190pF @ 25V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-MLP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMC3AM832TATR

ZXMC3AM832
0.01
100
0.1
0.1
0.1
10
10
1
1
1
1
Typical Transfer Characteristics
On-Resistance v Drain Current
T = 25°C
0.1
T = 150°C
-V
-V
DS
Output Characteristics
GS
0.1
-I
Drain-Source Voltage (V)
2
D
Gate-Source Voltage (V)
2V
Drain Current (A)
-V
GS
T = 25°C
1
10V
P-CHANNEL TYPICAL CHARACTERISTICS
3
2.5V
1
5V
3V
-V
DS
T = 25°C
3.5V
= 10V
4
10
4V
4V
5V
2.5V
10
3.5V
-V
2V
3V
10V
GS
5
8
0.01
0.01
0.1
1.6
1.4
1.2
1.0
0.8
0.6
0.1
10
10
1
1
-50
0.2
Normalised Curves v Temperature
Source-Drain Diode Forward Voltage
T = 150°C
0.1
T = 150°C
-V
-V
Tj Junction Temperature (°C)
0.4
Output Characteristics
DS
SD
Drain-Source Voltage (V)
0
Source-Drain Voltage (V)
PROVISIONAL ISSUE E - JULY 2004
0.6
V
I
D
GS
= -250uA
1
= V
V
I
D
GS
0.8
= -1.4A
50
10V
DS
= -10V
T = 25°C
5V
1.0
100
10
4V
V
1.2
R
GS(th)
3.5V
DS(on)
2.5V
1.5V
3V
2V
-V
GS
150
1.4