SI3900DV-T1-E3 Vishay, SI3900DV-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI3900DV-T1-E3
• Description: MOSFET N-CH DUAL 20V 2.0A 6-TSOP
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI3900DV-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 125 mOhm @ 2.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 4nC @ 4.5V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Resistance Drain-source Rds (on): 0.2 Ohms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 2 A
• Power Dissipation: 0.83 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2.4A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 200mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3900DV-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 71178
S09-2275-Rev. D, 02-Nov-09
4.5
3.6
2.7
1.8
0.9
0.0
0.1
0.5
0.4
0.3
0.2
0.1
0.0
10
1
0.0
0
0
V
I
D
DS
Source-Drain Diode Forward Voltage
= 2.4 A
V
1
On-Resistance vs. Drain Current
GS
= 10 V
T
0.3
0.5
J
= 2.5 V
V
= 150 °C
SD
Q
g
2
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
I
D
Gate Charge
- Drain Current (A)
1.0
0.6
3
T
4
1.5
0.9
J
= 25 °C
V
5
GS
2.0
1.2
= 4.5 V
6
1.5
2.5
7
0.40
0.32
0.24
0.16
0.08
0.00
300
250
200
150
100
1.8
1.6
1.4
1.2
1.0
0.8
0.6
50
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
V
I
- 25
C
D
GS
rss
= 2.4 A
= 4.5 V
1
4
I
V
V
D
GS
DS
T
= 1 A
0
C
C
J
oss
iss
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
- Junction Temperature (°C)
25
Capacitance
2
8
I
50
D
Vishay Siliconix
= 2.4 A
12
3
75
Si3900DV
www.vishay.com
100
16
4
125
150
20
5
3