SI7900AEDN-T1-E3 Vishay, SI7900AEDN-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI7900AEDN-T1-E3
• Description: MOSFET DUAL N-CH 20V 1212-8
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI7900AEDN-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 26 mOhm @ 8.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 900mV @ 250µA
• Gate Charge (qg) @ Vgs: 16nC @ 4.5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® 1212-8 Dual
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 8.5A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 36mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 900mV
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI7900AEDN-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see http://www.vishay.com/ppg?72287.
Document Number: 72287
S-81544-Rev. C, 07-Jul-08
0.01
0.1
2
1
10
-5
0.05
0.1
Duty Cycle = 0.5
0.2
Single Pulse
0.02
10
-4
Normalized Thermal Transient Impedance, Junction-to-Case
Square Wave Pulse Duration (s)
10
-3
10
-2
10
-1
Vishay Siliconix
Si7900AEDN
www.vishay.com
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