UM6K1NTN Rohm Semiconductor, UM6K1NTN Datasheet - Page 2

• Manufacturer Part Number: UM6K1NTN
• Description: MOSFET 2N-CH 30V .1A SOT-363
• Manufacturer: Rohm Semiconductor

Specifications of UM6K1NTN

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8 Ohm @ 10mA, 4V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100mA
• Vgs(th) (max) @ Id: 1.5V @ 100µA
• Input Capacitance (ciss) @ Vds: 13pF @ 5V
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Umt6: Module Configuration
• Transistor Polarity: Dual N Channel
• Continuous Drain Current Id: 10mA
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 8ohm
• Rds(on) Test Voltage Vgs: 4V
• Threshold: RoHS Compliant
• Configuration: Dual
• Resistance Drain-source Rds (on): 8 Ohm @ 4 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.1 A
• Power Dissipation: 150 mW
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: UM6K1NTNTR; UM6K1NTR; UM6K1NTR

Transistors
<It is the same characteristics for Tr1 and Tr2.>
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Electrical characteristics (Ta=25°C)
Electrical characteristic curves
0.15
0.05
0.1
Fig.4 Static Drain-Source On-State
Fig.1 Typical Output Characteristics
0
0.5
0
50
20
10
5
2
1
0.001
DRAIN-SOURCE VOLTAGE : V
Resistance vs. Drain Current ( )
0.002
Parameter
1
Ta=125 °C
4V
3.5V
DRAIN CURRENT : I
0.005 0.01 0.02
−25 °C
75 °C
25 °C
V
2
GS
2.5V
2V
=1.5V
3V
3
0.05
D
0.1
4
( A)
DS
V
V
Pulsed
Symbol
( V)
R
V
GS
0.2
(BR) DSS
t
t
C
I
I
C
GS (th)
DS (on)
C
d (on)
d (off)
Y
=4V
GSS
DSS
t
t
oss
iss
rss
r
5
fs
f
0.5
Min.
0.8
30
20
−
−
−
−
−
−
−
−
−
−
−
Fig.5 Static Drain-Source On-State
200m
100m
0.5m
0.2m
0.1m
50m
20m
10m
5m
2m
1m
Fig.2 Typical Transfer Characteristics
0.5
50
20
10
0
5
2
1
0.001
Typ.
13
15
35
80
80
V
Pulsed
5
7
9
4
−
−
−
−
−
Resistance vs. Drain Current ( )
DS
GATE-SOURCE VOLTAGE : V
0.002
=3V
Ta=125 °C
Max.
1
DRAIN CURRENT : I
0.005 0.01 0.02
1.0
1.5
±1
−25 °C
13
−
8
−
−
−
−
−
−
−
−
75 °C
25 °C
Unit
2
mS
µA
µA
Ta=125 °C
pF
pF
pF
ns
ns
ns
ns
Ω
Ω
V
V
−25 °C
75 °C
25 °C
0.05
V
I
V
V
I
I
I
V
V
f=1MHz
V
I
V
R
R
D
D
D
D
D
D
3
0.1
GS
DS
DS
DS
GS
DD
GS
L
G
= 10µA, V
= 10mA, V
= 1mA, V
= 10mA, V
= 10mA
( A)
=500Ω
=10Ω
GS
V
Pulsed
= 30V, V
= 3V, I
= 5V
=±20V, V
=0V
= 5V
GS
( V)
0.2
=2.5V
5 V
4
0.5
D
Conditions
GS
= 100µA
GS
GS
GS
DS
DS
= 2.5V
=0V
=0V
= 4V
= 3V
=0V
Fig.6 Static Drain-Source On-State
1.5
0.5
15
10
5
0
2
1
0
−50
0
Fig.3 Gate Threshold Voltage vs.
Resistance vs. Gate-Source Voltage
CHANNEL TEMPERATURE : Tch ( °C)
−25
GATE-SOURCE VOLTAGE : V
Channel Temperature
0
5
Rev.B
25
10
50
UM6K1N
I
I
D
D
=0.05A
=0.1A
75
100 125 150
15
V
I
D
Ta=25 °C
Pulsed
GS
DS
=0.1mA
=3V
( V)
2/3
20