PMGD780SN,115 NXP Semiconductors, PMGD780SN,115 Datasheet - Page 9

• Manufacturer Part Number: PMGD780SN,115
• Description: MOSFET N-CH TRENCH DL 60V SOT363
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PMGD780SN,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 920 mOhm @ 300mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 490mA
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 1.05nC @ 10V
• Input Capacitance (ciss) @ Vds: 23pF @ 30V
• Power - Max: 410mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Dual
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.92 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.49 A
• Power Dissipation: 410 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-2369-2; 934057709115; PMGD780SN T/R

NXP Semiconductors
7. Package outline
Fig 14. Package outline SOT363 (SC-88)
PMGD780SN_2
Product data sheet
Plastic surface-mounted package; 6 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT363
1.1
0.8
A
max
0.1
A 1
6
1
0.30
0.20
b p
y
IEC
pin 1
index
e 1
0.25
0.10
c
D
e
2
5
2.2
1.8
b p
D
All information provided in this document is subject to legal disclaimers.
JEDEC
1.35
1.15
E
4
3
REFERENCES
0
Rev. 02 — 19 April 2010
1.3
e
w
B
M
B
0.65
e
1
SC-88
JEITA
scale
1
H E
2.2
2.0
Dual N-channel μTrenchMOS standard level FET
A
0.45
0.15
L p
A 1
2 mm
0.25
0.15
Q
H E
E
0.2
v
detail X
PROJECTION
0.2
EUROPEAN
w
L p
Q
PMGD780SN
0.1
y
A
c
© NXP B.V. 2010. All rights reserved.
X
v
ISSUE DATE
M
04-11-08
06-03-16
A
SOT363
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